Loading…
Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition
Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic pr...
Saved in:
Published in: | Materials research express 2021-10, Vol.8 (10), p.106402 |
---|---|
Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | |
---|---|
cites | cdi_FETCH-LOGICAL-c401t-4ba84e3c576d02a5e3ad67a9815460c5ded9b4405c95ada551faa7fe4b7ee16d3 |
container_end_page | |
container_issue | 10 |
container_start_page | 106402 |
container_title | Materials research express |
container_volume | 8 |
creator | Luo, Yuan Hu, Jinquan Hu, Changyi Chang, Qiaowen Zhao, Jun Wei, Yan Cai, Hongzhong |
description | Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains. |
doi_str_mv | 10.1088/2053-1591/ac2fcb |
format | article |
fullrecord | <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_iop_journals_10_1088_2053_1591_ac2fcb</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><doaj_id>oai_doaj_org_article_6df0d5f6e5054534b28b12eb8487e668</doaj_id><sourcerecordid>2585952235</sourcerecordid><originalsourceid>FETCH-LOGICAL-c401t-4ba84e3c576d02a5e3ad67a9815460c5ded9b4405c95ada551faa7fe4b7ee16d3</originalsourceid><addsrcrecordid>eNp9UcFO3TAQjKoiFQF3jpZ66KUptuN1nGOFWoqEBAc4Wxt7zfNTEqdOHoW_J48g2kPFaVermdnRTFGcCv5NcGPOJIeqFNCIM3QyuPZDcfh2-vjP_qk4maYt51zWTQVSHxY3Fzn9mTcsBbbBMMRdz3xMj9ETmzdxYCF2_cQeIrKeZuzKlO9xiI65DfXRYccecEyZeRrTFOeYhuPiIGA30cnrPCrufv64Pf9VXl1fXJ5_vyqd4mIuVYtGUeWg1p5LBKrQ6xobI0Bp7sCTb1qlOLgG0COACIh1INXWREL76qi4XHV9wq0dc-wxP9mE0b4cFp8W8xxdR1b7wD0ETcBBQaVaaVohqTXK1KS1WbQ-r1pjTr93NM12m3Z5WOxbCQYakLKCBcVXlMtpmjKFt6-C230Ndp-z3eds1xoWyteVEtP4V_Md-Jf_wPv8aM1K0opLO_pQPQPUHpaR</addsrcrecordid><sourcetype>Open Website</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2585952235</pqid></control><display><type>article</type><title>Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition</title><source>Publicly Available Content Database</source><creator>Luo, Yuan ; Hu, Jinquan ; Hu, Changyi ; Chang, Qiaowen ; Zhao, Jun ; Wei, Yan ; Cai, Hongzhong</creator><creatorcontrib>Luo, Yuan ; Hu, Jinquan ; Hu, Changyi ; Chang, Qiaowen ; Zhao, Jun ; Wei, Yan ; Cai, Hongzhong</creatorcontrib><description>Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains.</description><identifier>ISSN: 2053-1591</identifier><identifier>EISSN: 2053-1591</identifier><identifier>DOI: 10.1088/2053-1591/ac2fcb</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>Dioxides ; Hafnium compounds ; hafnium dioxide films ; Hafnium oxide ; hafnium(IV) acetylacetonate ; Infrared analysis ; Infrared spectroscopy ; Metalorganic chemical vapor deposition ; MOCVD ; Morphology ; Organic chemicals ; Organic chemistry ; Photoelectrons ; Precursors ; Spectrum analysis ; Substrates ; Thermal decomposition ; Thermal stability ; Thermogravimetric analysis ; Thin films ; Vaporization ; X ray photoelectron spectroscopy</subject><ispartof>Materials research express, 2021-10, Vol.8 (10), p.106402</ispartof><rights>2021 The Author(s). Published by IOP Publishing Ltd</rights><rights>2021. This work is published under http://creativecommons.org/licenses/by/4.0/ (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c401t-4ba84e3c576d02a5e3ad67a9815460c5ded9b4405c95ada551faa7fe4b7ee16d3</cites><orcidid>0000-0002-5455-4397</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2585952235?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>314,780,784,25751,27922,27923,37010,44588</link.rule.ids></links><search><creatorcontrib>Luo, Yuan</creatorcontrib><creatorcontrib>Hu, Jinquan</creatorcontrib><creatorcontrib>Hu, Changyi</creatorcontrib><creatorcontrib>Chang, Qiaowen</creatorcontrib><creatorcontrib>Zhao, Jun</creatorcontrib><creatorcontrib>Wei, Yan</creatorcontrib><creatorcontrib>Cai, Hongzhong</creatorcontrib><title>Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition</title><title>Materials research express</title><addtitle>MRX</addtitle><addtitle>Mater. Res. Express</addtitle><description>Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains.</description><subject>Dioxides</subject><subject>Hafnium compounds</subject><subject>hafnium dioxide films</subject><subject>Hafnium oxide</subject><subject>hafnium(IV) acetylacetonate</subject><subject>Infrared analysis</subject><subject>Infrared spectroscopy</subject><subject>Metalorganic chemical vapor deposition</subject><subject>MOCVD</subject><subject>Morphology</subject><subject>Organic chemicals</subject><subject>Organic chemistry</subject><subject>Photoelectrons</subject><subject>Precursors</subject><subject>Spectrum analysis</subject><subject>Substrates</subject><subject>Thermal decomposition</subject><subject>Thermal stability</subject><subject>Thermogravimetric analysis</subject><subject>Thin films</subject><subject>Vaporization</subject><subject>X ray photoelectron spectroscopy</subject><issn>2053-1591</issn><issn>2053-1591</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2021</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><sourceid>DOA</sourceid><recordid>eNp9UcFO3TAQjKoiFQF3jpZ66KUptuN1nGOFWoqEBAc4Wxt7zfNTEqdOHoW_J48g2kPFaVermdnRTFGcCv5NcGPOJIeqFNCIM3QyuPZDcfh2-vjP_qk4maYt51zWTQVSHxY3Fzn9mTcsBbbBMMRdz3xMj9ETmzdxYCF2_cQeIrKeZuzKlO9xiI65DfXRYccecEyZeRrTFOeYhuPiIGA30cnrPCrufv64Pf9VXl1fXJ5_vyqd4mIuVYtGUeWg1p5LBKrQ6xobI0Bp7sCTb1qlOLgG0COACIh1INXWREL76qi4XHV9wq0dc-wxP9mE0b4cFp8W8xxdR1b7wD0ETcBBQaVaaVohqTXK1KS1WbQ-r1pjTr93NM12m3Z5WOxbCQYakLKCBcVXlMtpmjKFt6-C230Ndp-z3eds1xoWyteVEtP4V_Md-Jf_wPv8aM1K0opLO_pQPQPUHpaR</recordid><startdate>20211001</startdate><enddate>20211001</enddate><creator>Luo, Yuan</creator><creator>Hu, Jinquan</creator><creator>Hu, Changyi</creator><creator>Chang, Qiaowen</creator><creator>Zhao, Jun</creator><creator>Wei, Yan</creator><creator>Cai, Hongzhong</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-5455-4397</orcidid></search><sort><creationdate>20211001</creationdate><title>Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition</title><author>Luo, Yuan ; Hu, Jinquan ; Hu, Changyi ; Chang, Qiaowen ; Zhao, Jun ; Wei, Yan ; Cai, Hongzhong</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c401t-4ba84e3c576d02a5e3ad67a9815460c5ded9b4405c95ada551faa7fe4b7ee16d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2021</creationdate><topic>Dioxides</topic><topic>Hafnium compounds</topic><topic>hafnium dioxide films</topic><topic>Hafnium oxide</topic><topic>hafnium(IV) acetylacetonate</topic><topic>Infrared analysis</topic><topic>Infrared spectroscopy</topic><topic>Metalorganic chemical vapor deposition</topic><topic>MOCVD</topic><topic>Morphology</topic><topic>Organic chemicals</topic><topic>Organic chemistry</topic><topic>Photoelectrons</topic><topic>Precursors</topic><topic>Spectrum analysis</topic><topic>Substrates</topic><topic>Thermal decomposition</topic><topic>Thermal stability</topic><topic>Thermogravimetric analysis</topic><topic>Thin films</topic><topic>Vaporization</topic><topic>X ray photoelectron spectroscopy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Luo, Yuan</creatorcontrib><creatorcontrib>Hu, Jinquan</creatorcontrib><creatorcontrib>Hu, Changyi</creatorcontrib><creatorcontrib>Chang, Qiaowen</creatorcontrib><creatorcontrib>Zhao, Jun</creatorcontrib><creatorcontrib>Wei, Yan</creatorcontrib><creatorcontrib>Cai, Hongzhong</creatorcontrib><collection>IOP Publishing</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central</collection><collection>SciTech Premium Collection (Proquest) (PQ_SDU_P3)</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>Materials research express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Luo, Yuan</au><au>Hu, Jinquan</au><au>Hu, Changyi</au><au>Chang, Qiaowen</au><au>Zhao, Jun</au><au>Wei, Yan</au><au>Cai, Hongzhong</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition</atitle><jtitle>Materials research express</jtitle><stitle>MRX</stitle><addtitle>Mater. Res. Express</addtitle><date>2021-10-01</date><risdate>2021</risdate><volume>8</volume><issue>10</issue><spage>106402</spage><pages>106402-</pages><issn>2053-1591</issn><eissn>2053-1591</eissn><abstract>Metal-organic chemical vapour deposition (MOCVD) is a key technique for depositing thin solid film materials for use in important technological applications. To obtain thin films of the desired standard, it is essential to design volatile, reactive and thermally stable precursors. A metal-organic precursor consisting of Hf with excellent vaporization characteristics and low decomposition temperature has been reported. Hafnium dioxide thin films on a Mo substrate were obtained via thermal MOCVD using Hafnium(IV) acetylacetonate(Hf(acac)4) in a horizontal cold-wall reactor. The Hf(acac)4 precursor was synthesized from HfCl4 and Hthd in methanol. Hf(acac)4 was characterized using elemental analysis and infrared spectroscopy. The thermal decomposition properties were studied using thermogravimetric analysis under a nitrogen atmosphere. The results showed that Hf(acac)4 was completely volatised at 245 °C. The thin films products were investigated using x-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM). The results from these measurements revealed that the main crystalline phase was the monoclinic phase, the surface consists of hafnium and oxygen and the morphology was densely packed and composed of visible grains.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/2053-1591/ac2fcb</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0002-5455-4397</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2053-1591 |
ispartof | Materials research express, 2021-10, Vol.8 (10), p.106402 |
issn | 2053-1591 2053-1591 |
language | eng |
recordid | cdi_iop_journals_10_1088_2053_1591_ac2fcb |
source | Publicly Available Content Database |
subjects | Dioxides Hafnium compounds hafnium dioxide films Hafnium oxide hafnium(IV) acetylacetonate Infrared analysis Infrared spectroscopy Metalorganic chemical vapor deposition MOCVD Morphology Organic chemicals Organic chemistry Photoelectrons Precursors Spectrum analysis Substrates Thermal decomposition Thermal stability Thermogravimetric analysis Thin films Vaporization X ray photoelectron spectroscopy |
title | Growth of hafnium dioxide thin films via metal-organic chemical vapor deposition |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-14T12%3A01%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Growth%20of%20hafnium%20dioxide%20thin%20films%20via%20metal-organic%20chemical%20vapor%20deposition&rft.jtitle=Materials%20research%20express&rft.au=Luo,%20Yuan&rft.date=2021-10-01&rft.volume=8&rft.issue=10&rft.spage=106402&rft.pages=106402-&rft.issn=2053-1591&rft.eissn=2053-1591&rft_id=info:doi/10.1088/2053-1591/ac2fcb&rft_dat=%3Cproquest_iop_j%3E2585952235%3C/proquest_iop_j%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c401t-4ba84e3c576d02a5e3ad67a9815460c5ded9b4405c95ada551faa7fe4b7ee16d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2585952235&rft_id=info:pmid/&rfr_iscdi=true |