Loading…
Tuning the topological band gap of bismuthene with silicon-based substrates
Some metastable polymorphs of bismuth monolayers (bismuthene) can host non-trivial topological phases. However, it remains unclear whether these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substra...
Saved in:
Published in: | JPhys materials 2022-07, Vol.5 (3), p.35002 |
---|---|
Main Authors: | , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites |
Online Access: | Get full text |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
cited_by | |
---|---|
cites | cdi_FETCH-LOGICAL-c382t-e0f0596b19d7eb407b2e283f0828ef8d7ffc372e9ca5bd4b41ca68859ac3dfb03 |
container_end_page | |
container_issue | 3 |
container_start_page | 35002 |
container_title | JPhys materials |
container_volume | 5 |
creator | Wittemeier, Nils Ordejón, Pablo Zanolli, Zeila |
description | Some metastable polymorphs of bismuth monolayers (bismuthene) can host non-trivial topological phases. However, it remains unclear whether these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. Using first-principles techniques, we demonstrate that bismuthene polymorphs can become stable over silicon carbide (SiC), silicon (Si), and silicon dioxide (SiO
2
) and that proximity interaction in these heterostructures has a significant effect on the electronic structure of the monolayer, even when bonding is weak. We show that van der Waals interactions and the breaking of the sublattice symmetry are the main factors driving changes in the electronic structure in non-covalently binding heterostructures. Our work demonstrates that substrate interaction can strengthen the topological properties of bismuthene polymorphs and make them accessible for experimental investigations and technological applications. |
doi_str_mv | 10.1088/2515-7639/ac84ad |
format | article |
fullrecord | <record><control><sourceid>proquest_iop_j</sourceid><recordid>TN_cdi_iop_journals_10_1088_2515_7639_ac84ad</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2700368955</sourcerecordid><originalsourceid>FETCH-LOGICAL-c382t-e0f0596b19d7eb407b2e283f0828ef8d7ffc372e9ca5bd4b41ca68859ac3dfb03</originalsourceid><addsrcrecordid>eNp1kE1LxDAQhosouKx79xjwJtZNk6ZJj7L4hQte1vOQpEk3S7epSav47-1SUQ96mmF43pfhSZLzDF9nWIglYRlLeUHLpdQil9VRMvs-Hf_aT5NFjDuMMeFljnM-S542Q-vaGvVbg3rf-cbXTssGKdlWqJYd8hYpF_fDCLQGvbt-i6JrnPZtqmQ0FYqDin2QvYlnyYmVTTSLrzlPXu5uN6uHdP18_7i6WaeaCtKnBlvMykJlZcWNyjFXxBBBLRZEGCsqbq2mnJhSS6aqXOWZloUQrJSaVlZhOk_o1Ns4UxvwQTl4I-Clm_ahqUFqUAYIKQSQkok8G1MXU6oL_nUwsYedH0I7PgqEY0wLUTI2UniidPAxBmOhC24vwwdkGA6u4SATDjJhcj1GLqeI891P567bj04CMKCAKRuVQ1fZEb76A_63-xO_so8e</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2700368955</pqid></control><display><type>article</type><title>Tuning the topological band gap of bismuthene with silicon-based substrates</title><source>Publicly Available Content Database</source><creator>Wittemeier, Nils ; Ordejón, Pablo ; Zanolli, Zeila</creator><creatorcontrib>Wittemeier, Nils ; Ordejón, Pablo ; Zanolli, Zeila</creatorcontrib><description>Some metastable polymorphs of bismuth monolayers (bismuthene) can host non-trivial topological phases. However, it remains unclear whether these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. Using first-principles techniques, we demonstrate that bismuthene polymorphs can become stable over silicon carbide (SiC), silicon (Si), and silicon dioxide (SiO
2
) and that proximity interaction in these heterostructures has a significant effect on the electronic structure of the monolayer, even when bonding is weak. We show that van der Waals interactions and the breaking of the sublattice symmetry are the main factors driving changes in the electronic structure in non-covalently binding heterostructures. Our work demonstrates that substrate interaction can strengthen the topological properties of bismuthene polymorphs and make them accessible for experimental investigations and technological applications.</description><identifier>ISSN: 2515-7639</identifier><identifier>EISSN: 2515-7639</identifier><identifier>DOI: 10.1088/2515-7639/ac84ad</identifier><language>eng</language><publisher>Bristol: IOP Publishing</publisher><subject>2d material ; 2D materials ; Atomic and Molecular Physics, and Optics ; Bismuth ; bismuthene ; Bonding strength ; Chemistry ; Chimie ; Condensed Matter Physics ; Density-functional-theory ; Electronic structure ; First principle method ; First principles ; first principles methods ; General Materials Science ; Heterostructures ; Materials Science (all) ; Monolayers ; Physical, chemical, mathematical & earth Sciences ; Physics ; Physique ; Physique, chimie, mathématiques & sciences de la terre ; quantum spin Hall ; Quantum spin halls ; Silicon carbide ; Silicon dioxide ; Silicon substrates ; Topological bands ; topological insulator ; Topological insulators ; Topological phase ; Topological properties ; Topology</subject><ispartof>JPhys materials, 2022-07, Vol.5 (3), p.35002</ispartof><rights>2022 The Author(s). Published by IOP Publishing Ltd</rights><rights>2022 The Author(s). Published by IOP Publishing Ltd. This work is published under http://creativecommons.org/licenses/by/4.0 (the “License”). Notwithstanding the ProQuest Terms and Conditions, you may use this content in accordance with the terms of the License.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c382t-e0f0596b19d7eb407b2e283f0828ef8d7ffc372e9ca5bd4b41ca68859ac3dfb03</cites><orcidid>0000-0002-1437-8659 ; 0000-0002-2353-2793 ; 0000-0003-0860-600X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2700368955?pq-origsite=primo$$EHTML$$P50$$Gproquest$$Hfree_for_read</linktohtml><link.rule.ids>230,314,777,781,882,25734,27905,27906,36993,44571</link.rule.ids></links><search><creatorcontrib>Wittemeier, Nils</creatorcontrib><creatorcontrib>Ordejón, Pablo</creatorcontrib><creatorcontrib>Zanolli, Zeila</creatorcontrib><title>Tuning the topological band gap of bismuthene with silicon-based substrates</title><title>JPhys materials</title><addtitle>JPhysMaterials</addtitle><addtitle>J. Phys. Mater</addtitle><description>Some metastable polymorphs of bismuth monolayers (bismuthene) can host non-trivial topological phases. However, it remains unclear whether these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. Using first-principles techniques, we demonstrate that bismuthene polymorphs can become stable over silicon carbide (SiC), silicon (Si), and silicon dioxide (SiO
2
) and that proximity interaction in these heterostructures has a significant effect on the electronic structure of the monolayer, even when bonding is weak. We show that van der Waals interactions and the breaking of the sublattice symmetry are the main factors driving changes in the electronic structure in non-covalently binding heterostructures. Our work demonstrates that substrate interaction can strengthen the topological properties of bismuthene polymorphs and make them accessible for experimental investigations and technological applications.</description><subject>2d material</subject><subject>2D materials</subject><subject>Atomic and Molecular Physics, and Optics</subject><subject>Bismuth</subject><subject>bismuthene</subject><subject>Bonding strength</subject><subject>Chemistry</subject><subject>Chimie</subject><subject>Condensed Matter Physics</subject><subject>Density-functional-theory</subject><subject>Electronic structure</subject><subject>First principle method</subject><subject>First principles</subject><subject>first principles methods</subject><subject>General Materials Science</subject><subject>Heterostructures</subject><subject>Materials Science (all)</subject><subject>Monolayers</subject><subject>Physical, chemical, mathematical & earth Sciences</subject><subject>Physics</subject><subject>Physique</subject><subject>Physique, chimie, mathématiques & sciences de la terre</subject><subject>quantum spin Hall</subject><subject>Quantum spin halls</subject><subject>Silicon carbide</subject><subject>Silicon dioxide</subject><subject>Silicon substrates</subject><subject>Topological bands</subject><subject>topological insulator</subject><subject>Topological insulators</subject><subject>Topological phase</subject><subject>Topological properties</subject><subject>Topology</subject><issn>2515-7639</issn><issn>2515-7639</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><sourceid>PIMPY</sourceid><recordid>eNp1kE1LxDAQhosouKx79xjwJtZNk6ZJj7L4hQte1vOQpEk3S7epSav47-1SUQ96mmF43pfhSZLzDF9nWIglYRlLeUHLpdQil9VRMvs-Hf_aT5NFjDuMMeFljnM-S542Q-vaGvVbg3rf-cbXTssGKdlWqJYd8hYpF_fDCLQGvbt-i6JrnPZtqmQ0FYqDin2QvYlnyYmVTTSLrzlPXu5uN6uHdP18_7i6WaeaCtKnBlvMykJlZcWNyjFXxBBBLRZEGCsqbq2mnJhSS6aqXOWZloUQrJSaVlZhOk_o1Ns4UxvwQTl4I-Clm_ahqUFqUAYIKQSQkok8G1MXU6oL_nUwsYedH0I7PgqEY0wLUTI2UniidPAxBmOhC24vwwdkGA6u4SATDjJhcj1GLqeI891P567bj04CMKCAKRuVQ1fZEb76A_63-xO_so8e</recordid><startdate>20220701</startdate><enddate>20220701</enddate><creator>Wittemeier, Nils</creator><creator>Ordejón, Pablo</creator><creator>Zanolli, Zeila</creator><general>IOP Publishing</general><general>Institute of Physics</general><scope>O3W</scope><scope>TSCCA</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>PDBOC</scope><scope>PIMPY</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q33</scope><orcidid>https://orcid.org/0000-0002-1437-8659</orcidid><orcidid>https://orcid.org/0000-0002-2353-2793</orcidid><orcidid>https://orcid.org/0000-0003-0860-600X</orcidid></search><sort><creationdate>20220701</creationdate><title>Tuning the topological band gap of bismuthene with silicon-based substrates</title><author>Wittemeier, Nils ; Ordejón, Pablo ; Zanolli, Zeila</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c382t-e0f0596b19d7eb407b2e283f0828ef8d7ffc372e9ca5bd4b41ca68859ac3dfb03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><topic>2d material</topic><topic>2D materials</topic><topic>Atomic and Molecular Physics, and Optics</topic><topic>Bismuth</topic><topic>bismuthene</topic><topic>Bonding strength</topic><topic>Chemistry</topic><topic>Chimie</topic><topic>Condensed Matter Physics</topic><topic>Density-functional-theory</topic><topic>Electronic structure</topic><topic>First principle method</topic><topic>First principles</topic><topic>first principles methods</topic><topic>General Materials Science</topic><topic>Heterostructures</topic><topic>Materials Science (all)</topic><topic>Monolayers</topic><topic>Physical, chemical, mathematical & earth Sciences</topic><topic>Physics</topic><topic>Physique</topic><topic>Physique, chimie, mathématiques & sciences de la terre</topic><topic>quantum spin Hall</topic><topic>Quantum spin halls</topic><topic>Silicon carbide</topic><topic>Silicon dioxide</topic><topic>Silicon substrates</topic><topic>Topological bands</topic><topic>topological insulator</topic><topic>Topological insulators</topic><topic>Topological phase</topic><topic>Topological properties</topic><topic>Topology</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Wittemeier, Nils</creatorcontrib><creatorcontrib>Ordejón, Pablo</creatorcontrib><creatorcontrib>Zanolli, Zeila</creatorcontrib><collection>IOP Publishing (Open access)</collection><collection>IOPscience (Open Access)</collection><collection>CrossRef</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni)</collection><collection>ProQuest Central</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>SciTech Premium Collection</collection><collection>Materials Science Database</collection><collection>Materials Science Collection</collection><collection>Publicly Available Content Database</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>Université de Liège - Open Repository and Bibliography (ORBI)</collection><jtitle>JPhys materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Wittemeier, Nils</au><au>Ordejón, Pablo</au><au>Zanolli, Zeila</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Tuning the topological band gap of bismuthene with silicon-based substrates</atitle><jtitle>JPhys materials</jtitle><stitle>JPhysMaterials</stitle><addtitle>J. Phys. Mater</addtitle><date>2022-07-01</date><risdate>2022</risdate><volume>5</volume><issue>3</issue><spage>35002</spage><pages>35002-</pages><issn>2515-7639</issn><eissn>2515-7639</eissn><abstract>Some metastable polymorphs of bismuth monolayers (bismuthene) can host non-trivial topological phases. However, it remains unclear whether these polymorphs can become stable through interaction with a substrate, whether their topological properties are preserved, and how to design an optimal substrate to make the topological phase more robust. Using first-principles techniques, we demonstrate that bismuthene polymorphs can become stable over silicon carbide (SiC), silicon (Si), and silicon dioxide (SiO
2
) and that proximity interaction in these heterostructures has a significant effect on the electronic structure of the monolayer, even when bonding is weak. We show that van der Waals interactions and the breaking of the sublattice symmetry are the main factors driving changes in the electronic structure in non-covalently binding heterostructures. Our work demonstrates that substrate interaction can strengthen the topological properties of bismuthene polymorphs and make them accessible for experimental investigations and technological applications.</abstract><cop>Bristol</cop><pub>IOP Publishing</pub><doi>10.1088/2515-7639/ac84ad</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-1437-8659</orcidid><orcidid>https://orcid.org/0000-0002-2353-2793</orcidid><orcidid>https://orcid.org/0000-0003-0860-600X</orcidid><oa>free_for_read</oa></addata></record> |
fulltext | fulltext |
identifier | ISSN: 2515-7639 |
ispartof | JPhys materials, 2022-07, Vol.5 (3), p.35002 |
issn | 2515-7639 2515-7639 |
language | eng |
recordid | cdi_iop_journals_10_1088_2515_7639_ac84ad |
source | Publicly Available Content Database |
subjects | 2d material 2D materials Atomic and Molecular Physics, and Optics Bismuth bismuthene Bonding strength Chemistry Chimie Condensed Matter Physics Density-functional-theory Electronic structure First principle method First principles first principles methods General Materials Science Heterostructures Materials Science (all) Monolayers Physical, chemical, mathematical & earth Sciences Physics Physique Physique, chimie, mathématiques & sciences de la terre quantum spin Hall Quantum spin halls Silicon carbide Silicon dioxide Silicon substrates Topological bands topological insulator Topological insulators Topological phase Topological properties Topology |
title | Tuning the topological band gap of bismuthene with silicon-based substrates |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T17%3A02%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_iop_j&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Tuning%20the%20topological%20band%20gap%20of%20bismuthene%20with%20silicon-based%20substrates&rft.jtitle=JPhys%20materials&rft.au=Wittemeier,%20Nils&rft.date=2022-07-01&rft.volume=5&rft.issue=3&rft.spage=35002&rft.pages=35002-&rft.issn=2515-7639&rft.eissn=2515-7639&rft_id=info:doi/10.1088/2515-7639/ac84ad&rft_dat=%3Cproquest_iop_j%3E2700368955%3C/proquest_iop_j%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c382t-e0f0596b19d7eb407b2e283f0828ef8d7ffc372e9ca5bd4b41ca68859ac3dfb03%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=2700368955&rft_id=info:pmid/&rfr_iscdi=true |