GaAs-on-insulator ridge waveguide nanobeam cavities with integrated InAs quantum dots

This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical st...

Full description

Saved in:
Bibliographic Details
Published in:Materials for quantum technology 2024-06, Vol.4 (2), p.25403
Main Authors: Zhou, Yueguang, Yang, Yuhui, Wang, Yujing, Koulas-Simos, Aris, C Palekar, Chirag, Limame, Imad, Li, Shulun, Liu, Hanqing, Ni, Haiqiao, Niu, Zhichuan, Yvind, Kresten, Gregersen, Niels, Pu, Minhao, Reitzenstein, Stephan
Format: Article
Language:English
Subjects:
integrated quantum photonic circuit
nanobeam cavity
quantum dot
single-photon emitter
waveguide
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This study investigates nanobeam cavities on a GaAs-on-insulator (GaAsOI) chip with InAs quantum dots (QDs), including design, fabrication, and experimental characterization. The nanobeam cavities are optimized for high photon coupling efficiency and pronounced light-matter interaction. Numerical studies yield Q factors up to about 1400, a coupling efficiency of nearly 70 % and a maximum Purcell factor of approximately 100. Experimentally, these devices have a Q factor of about 1300, and comparing the lifetime of QDs in on-resonance and off-resonance conditions, a Purcell factor of 10.46 ± 0.14 is obtained. Moreover, in the single-emitter regime, we observe strong multiphoton suppression with g ( 2 ) ( 0 ) = 0.297 . Our results demonstrate the high potential of nanobeam cavities on a GaAsOI platform for quantum photonic applications.
ISSN:2633-4356
2633-4356
DOI:10.1088/2633-4356/ad5823