Simple Aqueous Solution Route for Fabrication High Performance Oxide TFT

Metal oxide semiconductor attracts considerable attentions for driving circuit of next generation displays and energy devices owing to their simultaneous transparency and high electrical performance. We report fluorine doped zinc tin oxide (ZTO:F) and indium zinc oxide (IZO) thin-film transistors (T...

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Bibliographic Details
Main Authors: Bae, Byeong-Soo, Hwang, Young Hwan, Seo, Jin-Suk, Choi, Gwang-Mun
Format: Conference Proceeding
Language:English
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Summary:Metal oxide semiconductor attracts considerable attentions for driving circuit of next generation displays and energy devices owing to their simultaneous transparency and high electrical performance. We report fluorine doped zinc tin oxide (ZTO:F) and indium zinc oxide (IZO) thin-film transistors (TFT) via aqueous route. The aqueous route enables the fabrication of oxide TFT at low temperature with reasonable cost. The ZTO:F TFT exhibits good electrical performance and stability over electrical stress due to the effective removal of oxygen vacancy and generation of carrier by F doping. The IZO TFTs also shows good performance in terms of mobility and operation accuracy. Finally, the optimized IZO TFT is fabricated on plastic substrate with 250 ℃ annealing and the device exhibits sufficient performance for operation of various displays and basic circuitries.
ISSN:1938-5862
1938-6737
DOI:10.1149/05008.0101ecst