(Invited) Top-Gate Effects in Dual-Gate Amorphous InGaZnO4 Thin-Film Transistors

We discuss the dependence of bottom-gate transfer characteristics (Vbg-Id) on top-gate voltage (Vtg), which we call "top-gate effects", using a-IGZO TFTs having a dual-gate structure. We consider the top-gate effects to be a measure of how a-IGZO TFT characteristics are sensitive to charge...

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Bibliographic Details
Published in:ECS transactions 2013-03, Vol.50 (8), p.139-149
Main Authors: Takechi, Kazushige, Iwamatsu, Shinnosuke, Yahagi, Toru, Watanabe, Yoshiyuki, Kobayashi, Seiya, Tanabe, Hiroshi
Format: Article
Language:eng ; jpn
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Summary:We discuss the dependence of bottom-gate transfer characteristics (Vbg-Id) on top-gate voltage (Vtg), which we call "top-gate effects", using a-IGZO TFTs having a dual-gate structure. We consider the top-gate effects to be a measure of how a-IGZO TFT characteristics are sensitive to charge generation on TFTs. We compare the top-gate effects in a-IGZO TFTs and conventional channel-etched a-Si:H TFTs. We found that the positive top-gate effect in a-IGZO TFTs varied depending on top-channel properties, while the negative top-gate effect had a similar impact on Vbg-Id characteristics irrespective of top-channel properties. We also found that a-IGZO TFTs had more significant top-gate effects than conventional a-Si:H TFTs.
ISSN:1938-5862
1938-6737
DOI:10.1149/05008.0139ecst