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Direct Bonding Mechanism of ALD-Al2O3 Thin Films

Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better...

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Bibliographic Details
Main Authors: Beche, Elodie, Fournel, Frank, Larrey, Vincent, Rieutord, François, Morales, Christophe, Charvet, Anne-Marie, Madeira, Florence, Audoit, Guillaume, Fabbri, Jean-Marc
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better understanding of bonding defect generation, high quality bonding interface using ALD-Al2O3 thin film have then been obtained. Even if some bonding results still deserve more investigations, a coherent direct bonding mechanism will be proposed.
ISSN:1938-5862
1938-6737
DOI:10.1149/06405.0057ecst