Direct Bonding Mechanism of ALD-Al2O3 Thin Films

Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better...

Full description

Saved in:
Bibliographic Details
Main Authors: Beche, Elodie, Fournel, Frank, Larrey, Vincent, Rieutord, François, Morales, Christophe, Charvet, Anne-Marie, Madeira, Florence, Audoit, Guillaume, Fabbri, Jean-Marc
Format: Conference Proceeding
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 65
container_issue 5
container_start_page 57
container_title
container_volume 64
creator Beche, Elodie
Fournel, Frank
Larrey, Vincent
Rieutord, François
Morales, Christophe
Charvet, Anne-Marie
Madeira, Florence
Audoit, Guillaume
Fabbri, Jean-Marc
description Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better understanding of bonding defect generation, high quality bonding interface using ALD-Al2O3 thin film have then been obtained. Even if some bonding results still deserve more investigations, a coherent direct bonding mechanism will be proposed.
doi_str_mv 10.1149/06405.0057ecst
format conference_proceeding
fullrecord <record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1149_06405_0057ecst</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10.1149/06405.0057ecst</sourcerecordid><originalsourceid>FETCH-LOGICAL-h290t-9d918c3cfe2cb0f9f9047cc5d4d22cc2ffd75646b0be192b2cab1318dc7fb6393</originalsourceid><addsrcrecordid>eNo1jz1PwzAURS0EEqWwMntGSnn-jsfQUkAK6lLmKH62ias0QXX4_xRapnuXe64OIfcMFoxJ-whagloAKBMwTxdkxqwoC22EuTx3VWp-TW5y3gHo48bMCKzSIeBEn8bBp-GTvgfs2iHlPR0jrepVUfV8I-i2SwNdp36fb8lVbPsc7s45Jx_r5-3ytag3L2_Lqi46bmEqrLesRIExcHQQbbQgDaLy0nOOyGP0RmmpHbjALHccW8cEKz2a6LSwYk4eTtw0fjW78fswHN8aBs2va_Pn2vy7ih_LgUYk</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Direct Bonding Mechanism of ALD-Al2O3 Thin Films</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Beche, Elodie ; Fournel, Frank ; Larrey, Vincent ; Rieutord, François ; Morales, Christophe ; Charvet, Anne-Marie ; Madeira, Florence ; Audoit, Guillaume ; Fabbri, Jean-Marc</creator><creatorcontrib>Beche, Elodie ; Fournel, Frank ; Larrey, Vincent ; Rieutord, François ; Morales, Christophe ; Charvet, Anne-Marie ; Madeira, Florence ; Audoit, Guillaume ; Fabbri, Jean-Marc</creatorcontrib><description>Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better understanding of bonding defect generation, high quality bonding interface using ALD-Al2O3 thin film have then been obtained. Even if some bonding results still deserve more investigations, a coherent direct bonding mechanism will be proposed.</description><identifier>ISSN: 1938-5862</identifier><identifier>EISSN: 1938-6737</identifier><identifier>DOI: 10.1149/06405.0057ecst</identifier><language>eng</language><publisher>The Electrochemical Society, Inc</publisher><ispartof>ECS transactions, 2014, Vol.64 (5), p.57-65</ispartof><rights>2014 ECS - The Electrochemical Society</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Beche, Elodie</creatorcontrib><creatorcontrib>Fournel, Frank</creatorcontrib><creatorcontrib>Larrey, Vincent</creatorcontrib><creatorcontrib>Rieutord, François</creatorcontrib><creatorcontrib>Morales, Christophe</creatorcontrib><creatorcontrib>Charvet, Anne-Marie</creatorcontrib><creatorcontrib>Madeira, Florence</creatorcontrib><creatorcontrib>Audoit, Guillaume</creatorcontrib><creatorcontrib>Fabbri, Jean-Marc</creatorcontrib><title>Direct Bonding Mechanism of ALD-Al2O3 Thin Films</title><title>ECS transactions</title><addtitle>ECS Trans</addtitle><description>Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better understanding of bonding defect generation, high quality bonding interface using ALD-Al2O3 thin film have then been obtained. Even if some bonding results still deserve more investigations, a coherent direct bonding mechanism will be proposed.</description><issn>1938-5862</issn><issn>1938-6737</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2014</creationdate><recordtype>conference_proceeding</recordtype><sourceid/><recordid>eNo1jz1PwzAURS0EEqWwMntGSnn-jsfQUkAK6lLmKH62ias0QXX4_xRapnuXe64OIfcMFoxJ-whagloAKBMwTxdkxqwoC22EuTx3VWp-TW5y3gHo48bMCKzSIeBEn8bBp-GTvgfs2iHlPR0jrepVUfV8I-i2SwNdp36fb8lVbPsc7s45Jx_r5-3ytag3L2_Lqi46bmEqrLesRIExcHQQbbQgDaLy0nOOyGP0RmmpHbjALHccW8cEKz2a6LSwYk4eTtw0fjW78fswHN8aBs2va_Pn2vy7ih_LgUYk</recordid><startdate>20140814</startdate><enddate>20140814</enddate><creator>Beche, Elodie</creator><creator>Fournel, Frank</creator><creator>Larrey, Vincent</creator><creator>Rieutord, François</creator><creator>Morales, Christophe</creator><creator>Charvet, Anne-Marie</creator><creator>Madeira, Florence</creator><creator>Audoit, Guillaume</creator><creator>Fabbri, Jean-Marc</creator><general>The Electrochemical Society, Inc</general><scope/></search><sort><creationdate>20140814</creationdate><title>Direct Bonding Mechanism of ALD-Al2O3 Thin Films</title><author>Beche, Elodie ; Fournel, Frank ; Larrey, Vincent ; Rieutord, François ; Morales, Christophe ; Charvet, Anne-Marie ; Madeira, Florence ; Audoit, Guillaume ; Fabbri, Jean-Marc</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-h290t-9d918c3cfe2cb0f9f9047cc5d4d22cc2ffd75646b0be192b2cab1318dc7fb6393</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2014</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Beche, Elodie</creatorcontrib><creatorcontrib>Fournel, Frank</creatorcontrib><creatorcontrib>Larrey, Vincent</creatorcontrib><creatorcontrib>Rieutord, François</creatorcontrib><creatorcontrib>Morales, Christophe</creatorcontrib><creatorcontrib>Charvet, Anne-Marie</creatorcontrib><creatorcontrib>Madeira, Florence</creatorcontrib><creatorcontrib>Audoit, Guillaume</creatorcontrib><creatorcontrib>Fabbri, Jean-Marc</creatorcontrib></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Beche, Elodie</au><au>Fournel, Frank</au><au>Larrey, Vincent</au><au>Rieutord, François</au><au>Morales, Christophe</au><au>Charvet, Anne-Marie</au><au>Madeira, Florence</au><au>Audoit, Guillaume</au><au>Fabbri, Jean-Marc</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Direct Bonding Mechanism of ALD-Al2O3 Thin Films</atitle><btitle>ECS transactions</btitle><addtitle>ECS Trans</addtitle><date>2014-08-14</date><risdate>2014</risdate><volume>64</volume><issue>5</issue><spage>57</spage><epage>65</epage><pages>57-65</pages><issn>1938-5862</issn><eissn>1938-6737</eissn><abstract>Direct bonding mechanism of deposited alumina has been investigated from room temperature up to 1200°C. Through thermal treatments applied prior to direct bonding, it is shown that bonding interface quality can be linked to interface evolution between silicon and alumina thin film. Thanks to better understanding of bonding defect generation, high quality bonding interface using ALD-Al2O3 thin film have then been obtained. Even if some bonding results still deserve more investigations, a coherent direct bonding mechanism will be proposed.</abstract><pub>The Electrochemical Society, Inc</pub><doi>10.1149/06405.0057ecst</doi><tpages>9</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1938-5862
ispartof ECS transactions, 2014, Vol.64 (5), p.57-65
issn 1938-5862
1938-6737
language eng
recordid cdi_iop_journals_10_1149_06405_0057ecst
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
title Direct Bonding Mechanism of ALD-Al2O3 Thin Films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T21%3A09%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Direct%20Bonding%20Mechanism%20of%20ALD-Al2O3%20Thin%20Films&rft.btitle=ECS%20transactions&rft.au=Beche,%20Elodie&rft.date=2014-08-14&rft.volume=64&rft.issue=5&rft.spage=57&rft.epage=65&rft.pages=57-65&rft.issn=1938-5862&rft.eissn=1938-6737&rft_id=info:doi/10.1149/06405.0057ecst&rft_dat=%3Ciop%3E10.1149/06405.0057ecst%3C/iop%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-h290t-9d918c3cfe2cb0f9f9047cc5d4d22cc2ffd75646b0be192b2cab1318dc7fb6393%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true