(Invited) Investigation of Frenkel-Pair Formation in HfO2 and Its Influence on OxRAM Memory Reliability

In this work we combine experimental data and first principles calculations to investigate the conductive filament (CF) creation in HfO2 based resistive switching memories. First, we propose that the CF in HfO2-based resistive OxRAMs is due to HfOx sub-oxides, possibly assuming a tetragonal symmetry...

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Main Authors: Vianello, Elisa, Blaise, Philippe, Traoré, Boubacar, Xue, Kanhao, Fonseca, Leonardo, Molas, Gabriel, de Salvo, Barbara, Perniola, Luca, Nishi, Yoshio
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:In this work we combine experimental data and first principles calculations to investigate the conductive filament (CF) creation in HfO2 based resistive switching memories. First, we propose that the CF in HfO2-based resistive OxRAMs is due to HfOx sub-oxides, possibly assuming a tetragonal symmetry with x≤1.5. Second, we demonstrate that Frenkel-Pair formation is favored by electron injection and by the adoption of oxygen reactive electrodes with low work function, such as Ti. Finally, endurance tests on a memory cell with Ti as the top electrode were performed to assess its cycling stability. Endurance up to 108 cycles with optimized set conditions has been demonstrated.
ISSN:1938-5862
1938-6737
DOI:10.1149/06408.0141ecst