Higher-K Formation in Atomic Layer Deposited Hf1-XAlxOy

We have successfully deposited ALD Hf1-xAlxOy with Al/(Al+Hf)% ranging from 0 to 25% using a sequential precursor pulse method. The crystal phase was confirmed to be a mixed phase of tetragonal with monoclinic using a combination of synchrotron measurement techniques consisting of grazing incidence...

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Bibliographic Details
Main Authors: Tapily, Kandabara, Consiglio, Steve, Clark, Robert, Vasic, Relja, Wajda, Cory, Jordan-Sweet, Jean, Leusink, Gert, Diebold, A.C
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:We have successfully deposited ALD Hf1-xAlxOy with Al/(Al+Hf)% ranging from 0 to 25% using a sequential precursor pulse method. The crystal phase was confirmed to be a mixed phase of tetragonal with monoclinic using a combination of synchrotron measurement techniques consisting of grazing incidence X-ray diffraction, and grazing incidence extended X-ray absorption fine structure. We observed an enhancement in electrical properties near the crystallization temperature of the Hf1-xAlxOy films. In addition, the leakage current was also reduced by a factor of 10 while maintaining a flat-band voltage that is comparable to post deposition annealed (PDA) HfO2 films processed under identical conditions. An EOT reduction of ~2Å EOT with lower gate leakage was obtained for devices with post deposition anneal near the crystallization temperature of the Hf1-xAlxOy films.
ISSN:1938-5862
1938-6737
1938-6737
DOI:10.1149/06409.0123ecst