Leakage Currents Mechanism in Thin Films of Ferroelectric Hf0.5Zr0.5O2

We study the charge transport mechanism in ferroelectric Hf0.5Zr0.5O2 thin films. Transport properties of the leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison with transport properties of amorphous Hf0.5Zr0.5O2 demonstrates that the transport mech...

Full description

Saved in:
Bibliographic Details
Main Authors: Islamov, Damir R., Chernikova, Anna G., Kozodaev, Maxim G., Perevalov, Timofey V., Gritsenko, Vladimir A., Orlov, Oleg M., Markeev, Andrey M.
Format: Conference Proceeding
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We study the charge transport mechanism in ferroelectric Hf0.5Zr0.5O2 thin films. Transport properties of the leakage currents in Hf0.5Zr0.5O2 are described by phonon-assisted tunneling between traps. Comparison with transport properties of amorphous Hf0.5Zr0.5O2 demonstrates that the transport mechanism does not depend on the crystal structure. The thermal trap energy of 1.25 eV and optical trap energy of 2.5 eV in Hf0.5Zr0.5O2 were determined based on comparison of experimentally measured data on transport with simulations within phonon-assisted tunneling between traps in dielectric films. We found that the trap density in ferroelectric Hf0.5Zr0.5O2 is slightly less that one in amorphous Hf0.5Zr0.5O2. A hypothesis that oxygen vacancies are responsible for the charge transport in Hf0.5Zr0.5O2 is confirmed by electronic structure ab initio simulation.
ISSN:1938-5862
1938-6737
DOI:10.1149/07532.0123ecst