Yield and Reliability of Nanocrystalline Graphene Field-Effect Gas Sensors

Nanocrystalline graphene field-effect transistors show promising properties for the detection of ammonia (1). For large scale fabrication the yield of transfer-free in situ grown nanocrystalline graphene field-effect transistors is investigated on the basis of the input characteristics of 524 device...

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Bibliographic Details
Main Authors: Noll, Dennis, Schwalke, Udo
Format: Conference Proceeding
Language:English
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Summary:Nanocrystalline graphene field-effect transistors show promising properties for the detection of ammonia (1). For large scale fabrication the yield of transfer-free in situ grown nanocrystalline graphene field-effect transistors is investigated on the basis of the input characteristics of 524 devices with nominal width of 20µm and lengths of 3µm. Furthermore, a first study on the reliability on ncGFETs is given in respect to the charge trapping behavior of the ncGFETs. For that purpose, continuous input characteristics of individual ncGFETs have been recorded, analyzing the stability of the devices. Moreover, the hysteresis of the ncGFETs seen from the input characteristics is characterized in respect to the backgate voltage transient.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08609.0041ecst