Protection Against PID Degradation at Photovoltaic Cell Level

Nowadays, we find many scientific papers dealing with the potential induced degradation, in which authors attempt to achieve PID resistive photovoltaic cells. This work deals with the electrical properties of the newly created P-type photovoltaic cell. The IV-characteristics and external quantum eff...

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Bibliographic Details
Published in:ECS transactions 2018-01, Vol.87 (1), p.221-225
Main Authors: Hylský, Josef, Strachala, David, Čudek, Pavel, Vaněk, Jiri
Format: Article
Language:English
Online Access:Get full text
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Summary:Nowadays, we find many scientific papers dealing with the potential induced degradation, in which authors attempt to achieve PID resistive photovoltaic cells. This work deals with the electrical properties of the newly created P-type photovoltaic cell. The IV-characteristics and external quantum efficiency of the newly created and reference samples are compared. To verify the resistivity of the newly created photovoltaic cell against PID, both samples were artificially degraded.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/08701.0221ecst