Process Dependent Optimization of Dielectric and Metal Stacks for Multilevel Resistive Random-Access Memory

A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and th...

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Bibliographic Details
Published in:ECS transactions 2020-04, Vol.97 (3), p.13-20
Main Authors: Zhao, Pengxiang, Misra, Durga, Triyoso, Dina, Kaushik, Vidya, Tapily, Kandabara, Clark, Robert D., Consiglio, Steven, Wajda, Cory S., Leusink, Gert J.
Format: Article
Language:English
Online Access:Get full text
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Summary:A HfO2/Al2O3 bilayer structure for a two-terminal ReRAM device with an intention of having multiple resistance states as a function of compliance current (CC) after forming was evaluated. A reduced power consumption was observed when the Al2O3 buffer layer was placed between the top electrode and the HfO2 layer as compared to when it is embedded between the HfO2 layer and the bottom electrode. Gradual resistance change capability was observed with varying CC. The switching power requirement increases even if the Al2O3 buffer layer thickness was decreased when the buffer layer was near the bottom electrode. It was demonstrated that by modifying the deposition process of the top metal layer the switching energy requirement can be altered.
ISSN:1938-5862
1938-6737
DOI:10.1149/09703.0013ecst