InOx Doped SnO2 Nanostructure Deposited on MEMS Device by PE-ALD Process for Detection of NO2

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 2023-02, Vol.170 (2)
Main Authors: Shi, Zhong-Hong, Hsiao, Yu-Jen, Wang, Sheng-Chang, Tien, Wei-Chen
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue 2
container_start_page
container_title Journal of the Electrochemical Society
container_volume 170
creator Shi, Zhong-Hong
Hsiao, Yu-Jen
Wang, Sheng-Chang
Tien, Wei-Chen
description
doi_str_mv 10.1149/1945-7111/acb9c0
format article
fullrecord <record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1149_1945_7111_acb9c0</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jesacb9c0</sourcerecordid><originalsourceid>FETCH-LOGICAL-i225t-8718257100d481115a42fe3249c60bc0a1775aa22b3d7210aa8fccecfa9ad57c3</originalsourceid><addsrcrecordid>eNptkM9LwzAUx4MoOKd3jzl6sO69NFna49gPHWzrYHqUkKYJdEhTmlb0vzdj4snT432_3_eDDyH3CE-IPJ9gzkUiEXGiTZkbuCCjP-mSjAAwTfhU4DW5CeEYW8y4HJH3dVN80YVvbUUPTcHoTjc-9N1g-qGzdGFbH-o-mr6h2-X2EJXP2lhaftP9MpltFnTfeWNDoM530eyt6euY9Y7uCnZLrpz-CPbut47J22r5On9JNsXzej7bJDVjok8yiRkTEgEqnsV_hebM2ZTx3EyhNKBRSqE1Y2VaSYagdeaMscbpXFdCmnRMHs97a9-qox-6Jl5TCOqERp04qBMHdUYT4w__xI82jkhQTAGTAnLVVi79AUNhYso</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>InOx Doped SnO2 Nanostructure Deposited on MEMS Device by PE-ALD Process for Detection of NO2</title><source>Institute of Physics</source><creator>Shi, Zhong-Hong ; Hsiao, Yu-Jen ; Wang, Sheng-Chang ; Tien, Wei-Chen</creator><creatorcontrib>Shi, Zhong-Hong ; Hsiao, Yu-Jen ; Wang, Sheng-Chang ; Tien, Wei-Chen</creatorcontrib><identifier>ISSN: 0013-4651</identifier><identifier>EISSN: 1945-7111</identifier><identifier>DOI: 10.1149/1945-7111/acb9c0</identifier><identifier>CODEN: JESOAN</identifier><language>eng</language><publisher>IOP Publishing</publisher><ispartof>Journal of the Electrochemical Society, 2023-02, Vol.170 (2)</ispartof><rights>2023 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-0862-6473</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Shi, Zhong-Hong</creatorcontrib><creatorcontrib>Hsiao, Yu-Jen</creatorcontrib><creatorcontrib>Wang, Sheng-Chang</creatorcontrib><creatorcontrib>Tien, Wei-Chen</creatorcontrib><title>InOx Doped SnO2 Nanostructure Deposited on MEMS Device by PE-ALD Process for Detection of NO2</title><title>Journal of the Electrochemical Society</title><addtitle>JES</addtitle><addtitle>J. Electrochem. Soc</addtitle><issn>0013-4651</issn><issn>1945-7111</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2023</creationdate><recordtype>article</recordtype><sourceid/><recordid>eNptkM9LwzAUx4MoOKd3jzl6sO69NFna49gPHWzrYHqUkKYJdEhTmlb0vzdj4snT432_3_eDDyH3CE-IPJ9gzkUiEXGiTZkbuCCjP-mSjAAwTfhU4DW5CeEYW8y4HJH3dVN80YVvbUUPTcHoTjc-9N1g-qGzdGFbH-o-mr6h2-X2EJXP2lhaftP9MpltFnTfeWNDoM530eyt6euY9Y7uCnZLrpz-CPbut47J22r5On9JNsXzej7bJDVjok8yiRkTEgEqnsV_hebM2ZTx3EyhNKBRSqE1Y2VaSYagdeaMscbpXFdCmnRMHs97a9-qox-6Jl5TCOqERp04qBMHdUYT4w__xI82jkhQTAGTAnLVVi79AUNhYso</recordid><startdate>20230201</startdate><enddate>20230201</enddate><creator>Shi, Zhong-Hong</creator><creator>Hsiao, Yu-Jen</creator><creator>Wang, Sheng-Chang</creator><creator>Tien, Wei-Chen</creator><general>IOP Publishing</general><scope/><orcidid>https://orcid.org/0000-0003-0862-6473</orcidid></search><sort><creationdate>20230201</creationdate><title>InOx Doped SnO2 Nanostructure Deposited on MEMS Device by PE-ALD Process for Detection of NO2</title><author>Shi, Zhong-Hong ; Hsiao, Yu-Jen ; Wang, Sheng-Chang ; Tien, Wei-Chen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i225t-8718257100d481115a42fe3249c60bc0a1775aa22b3d7210aa8fccecfa9ad57c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2023</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shi, Zhong-Hong</creatorcontrib><creatorcontrib>Hsiao, Yu-Jen</creatorcontrib><creatorcontrib>Wang, Sheng-Chang</creatorcontrib><creatorcontrib>Tien, Wei-Chen</creatorcontrib><jtitle>Journal of the Electrochemical Society</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shi, Zhong-Hong</au><au>Hsiao, Yu-Jen</au><au>Wang, Sheng-Chang</au><au>Tien, Wei-Chen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InOx Doped SnO2 Nanostructure Deposited on MEMS Device by PE-ALD Process for Detection of NO2</atitle><jtitle>Journal of the Electrochemical Society</jtitle><stitle>JES</stitle><addtitle>J. Electrochem. Soc</addtitle><date>2023-02-01</date><risdate>2023</risdate><volume>170</volume><issue>2</issue><issn>0013-4651</issn><eissn>1945-7111</eissn><coden>JESOAN</coden><pub>IOP Publishing</pub><doi>10.1149/1945-7111/acb9c0</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-0862-6473</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 0013-4651
ispartof Journal of the Electrochemical Society, 2023-02, Vol.170 (2)
issn 0013-4651
1945-7111
language eng
recordid cdi_iop_journals_10_1149_1945_7111_acb9c0
source Institute of Physics
title InOx Doped SnO2 Nanostructure Deposited on MEMS Device by PE-ALD Process for Detection of NO2
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-07T10%3A39%3A23IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InOx%20Doped%20SnO2%20Nanostructure%20Deposited%20on%20MEMS%20Device%20by%20PE-ALD%20Process%20for%20Detection%20of%20NO2&rft.jtitle=Journal%20of%20the%20Electrochemical%20Society&rft.au=Shi,%20Zhong-Hong&rft.date=2023-02-01&rft.volume=170&rft.issue=2&rft.issn=0013-4651&rft.eissn=1945-7111&rft.coden=JESOAN&rft_id=info:doi/10.1149/1945-7111/acb9c0&rft_dat=%3Ciop%3Ejesacb9c0%3C/iop%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i225t-8718257100d481115a42fe3249c60bc0a1775aa22b3d7210aa8fccecfa9ad57c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true