A Novel PIN Switch Diode Integrating with 0.18um SiGe HBT BiCMOS Process

A novel structure PIN switch diode which is integrated into SiGe HBT BiCMOS process was reported in this paper reports. In this PIN device, an n-type pseudo buried layer (PBL) under STI is adopted as N region and the heavily doped extrinsic base of SiGe NPN HBT is used as P region. The pseudo buried...

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Main Authors: Liu, Donghua, Qian, Wensheng, Duan, Wenting, Hu, Jun, Chen, Fan, Chen, Xiongbin, Shi, Jing, Xue, Kai, Pan, Jia, Zhou, Zhengliang, Zhou, Keran, Chen, Xi, Zhou, Tianshu, Huang, Jingfeng, Xu, Xiangming, Xiao, Sheng'An, Chu, Tungyuan
Format: Conference Proceeding
Language:English
Online Access:Get full text
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Summary:A novel structure PIN switch diode which is integrated into SiGe HBT BiCMOS process was reported in this paper reports. In this PIN device, an n-type pseudo buried layer (PBL) under STI is adopted as N region and the heavily doped extrinsic base of SiGe NPN HBT is used as P region. The pseudo buried layer is picked up by a deep contact through field oxide. An extra implantation (PIN implantation) is induced into I region. Key parameters such as the size of active area, space from PBL to active area and energy & dose of PIN implant are obtained by simulation for PIN performance optimization. The demonstrated performance of this PIN diode exhibits an insertion loss as -0.56dB & an isolation loss as -22.26dB under 2.4Ghz frequency, and the BV can achieve 19V, which meets the requirement of PIN diode applied as switch in WiFi.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3694303