Non-Destructive, Large-Scale Imaging of Anti-Phase Disorder in GaP Epilayers on Si(001) Using Low-Energy Electron Microscopy

We introduce low-energy electron microcopy (LEEM) as a surface-sensitive technique for the investigation of anti-phase disorder and other defects in III-V semiconductor layers on Si(100) and present first results for 40 nm GaP films on Si(100). Using an actively pumped ultra-high vacuum transfer cha...

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Bibliographic Details
Main Authors: Borkenhagen, Benjamin, Döscher, Henning, Hannappel, Thomas, Lilienkamp, Gerhard, Daum, Winfried
Format: Conference Proceeding
Language:English
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Summary:We introduce low-energy electron microcopy (LEEM) as a surface-sensitive technique for the investigation of anti-phase disorder and other defects in III-V semiconductor layers on Si(100) and present first results for 40 nm GaP films on Si(100). Using an actively pumped ultra-high vacuum transfer chamber, we were able to preserve the surface structure and chemical composition of the MOVPE-grown GaP films on Si(100) during transfer from the MOVPE reaction chamber to the remote electron microscope. Applying dark- and bright-field imaging modes we demonstrate the unique potential of LEEM for non-invasive, fast and large-scale inspection of anti-phase disorder and surface defects in heteroepitaxial III-V systems on Si.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.3700472