Improving the Leakage Characteristics and Efficiency of GaN-based Micro-Light-Emitting Diode with Optimized Passivation

We investigated the effect of atomic layer deposition (ALD) Al2O3 (50 nm)/plasma-enhanced chemical vapour deposition (PECVD) SiO2 (250 nm) and PECVD SiO2 (300 nm) passivation layers on the leakage current and efficiency of InGaN-based micro-LEDs with different sizes. Regardless of passivation layers...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2020-05, Vol.9 (5), p.55001
Main Authors: Lee, Da-Hoon, Lee, Jung-Hoon, Park, Jin-Seong, Seong, Tae-Yeon, Amano, Hiroshi
Format: Article
Language:English
Subjects:
Atomic layer deposition
GaN
Micro-LED
Passivation
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Summary:We investigated the effect of atomic layer deposition (ALD) Al2O3 (50 nm)/plasma-enhanced chemical vapour deposition (PECVD) SiO2 (250 nm) and PECVD SiO2 (300 nm) passivation layers on the leakage current and efficiency of InGaN-based micro-LEDs with different sizes. Regardless of passivation layers, the leakage current increased with decreasing LED size and increasing reverse bias. Emission microscopy examination showed that with increasing reverse bias, the number of defect-related emission spots and their intensities increased. For the micro-LEDs
ISSN:2162-8769
2162-8777
2162-8777
DOI:10.1149/2162-8777/ab915d