Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing

Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspect...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2024-04, Vol.13 (4), p.44004
Main Authors: Liu, Pengzhan, Kang, Chul, Park, Kihong, Jeon, Sanghuck, Wang, Ziyang, Lee, Hyeonjeong, Jeong, Hyunjin, Lee, Euihaeng, Kim, Taesung
Format: Article
Language:English
Subjects:
added defect
chemical mechanical polishing
dielectrics - SiO
head sweep
removal amount
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Summary:Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspection, the polishing protocol plays a crucial role in effective process management. In fabrication scenarios, protocol revision is a convenient and practical approach for problem-solving. This research focuses on the study of head sweep direction, head sweep distance, and slurry sweep effects in oxide film polishing. Sweeping toward the outside resulted in an average increase of 12.66% removal amount for ceria and 11.57% for silica compared to fixed head polishing. Moreover, a longer head sweep distance reduced non-uniformity. While the slurry sweep exhibited a non-significant effect on the removal amount, it proved valuable in optimizing the removal amount profile.
ISSN:2162-8769
2162-8777
DOI:10.1149/2162-8777/ad38d8