Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing

Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspect...

Full description

Saved in:
Bibliographic Details
Published in:ECS journal of solid state science and technology 2024-04, Vol.13 (4), p.44004
Main Authors: Liu, Pengzhan, Kang, Chul, Park, Kihong, Jeon, Sanghuck, Wang, Ziyang, Lee, Hyeonjeong, Jeong, Hyunjin, Lee, Euihaeng, Kim, Taesung
Format: Article
Language:English
Subjects:
added defect
chemical mechanical polishing
dielectrics - SiO
head sweep
removal amount
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites cdi_FETCH-LOGICAL-c307t-900272925d7399bd4019b1c5ce4ff0a7e77c0ac15019bf67b8120675c066085c3
container_end_page
container_issue 4
container_start_page 44004
container_title ECS journal of solid state science and technology
container_volume 13
creator Liu, Pengzhan
Kang, Chul
Park, Kihong
Jeon, Sanghuck
Wang, Ziyang
Lee, Hyeonjeong
Jeong, Hyunjin
Lee, Euihaeng
Kim, Taesung
description Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspection, the polishing protocol plays a crucial role in effective process management. In fabrication scenarios, protocol revision is a convenient and practical approach for problem-solving. This research focuses on the study of head sweep direction, head sweep distance, and slurry sweep effects in oxide film polishing. Sweeping toward the outside resulted in an average increase of 12.66% removal amount for ceria and 11.57% for silica compared to fixed head polishing. Moreover, a longer head sweep distance reduced non-uniformity. While the slurry sweep exhibited a non-significant effect on the removal amount, it proved valuable in optimizing the removal amount profile.
doi_str_mv 10.1149/2162-8777/ad38d8
format article
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_1149_2162_8777_ad38d8</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jssad38d8</sourcerecordid><originalsourceid>FETCH-LOGICAL-c307t-900272925d7399bd4019b1c5ce4ff0a7e77c0ac15019bf67b8120675c066085c3</originalsourceid><addsrcrecordid>eNp1UE1PAjEUbIwmEuTusTcvrrx2u9vt0RAQEiIm6Lkp_cCSZXfTLir_3t1AOOm7vJfJzOTNIHRP4IkQJsaU5DQpOOdjZdLCFFdocIGuL3cubtEoxh10kxeMp3SAXhfVl42t36rW1xWuHX6rSx8_bcBzqwxWlcHr8hDCEa-_rW3w1DmrW-wrvPrxxuKZL_dnja-2d-jGqTLa0XkP0cds-j6ZJ8vVy2LyvEx0CrxNBADlVNDM8FSIjWFAxIboTFvmHChuOdegNMl63OV8UxAKOc805DkUmU6HCE6-OtQxButkE_xehaMkIPtKZJ9Z9vnlqZJO8nCS-LqRu_oQqu5BuYtRklQyCYwBMNkY1zEf_2D-a_wLWBxuNA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing</title><source>Institute of Physics</source><creator>Liu, Pengzhan ; Kang, Chul ; Park, Kihong ; Jeon, Sanghuck ; Wang, Ziyang ; Lee, Hyeonjeong ; Jeong, Hyunjin ; Lee, Euihaeng ; Kim, Taesung</creator><creatorcontrib>Liu, Pengzhan ; Kang, Chul ; Park, Kihong ; Jeon, Sanghuck ; Wang, Ziyang ; Lee, Hyeonjeong ; Jeong, Hyunjin ; Lee, Euihaeng ; Kim, Taesung</creatorcontrib><description>Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspection, the polishing protocol plays a crucial role in effective process management. In fabrication scenarios, protocol revision is a convenient and practical approach for problem-solving. This research focuses on the study of head sweep direction, head sweep distance, and slurry sweep effects in oxide film polishing. Sweeping toward the outside resulted in an average increase of 12.66% removal amount for ceria and 11.57% for silica compared to fixed head polishing. Moreover, a longer head sweep distance reduced non-uniformity. While the slurry sweep exhibited a non-significant effect on the removal amount, it proved valuable in optimizing the removal amount profile.</description><identifier>ISSN: 2162-8769</identifier><identifier>EISSN: 2162-8777</identifier><identifier>DOI: 10.1149/2162-8777/ad38d8</identifier><identifier>CODEN: EJSSBG</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>added defect ; chemical mechanical polishing ; dielectrics - SiO ; head sweep ; removal amount</subject><ispartof>ECS journal of solid state science and technology, 2024-04, Vol.13 (4), p.44004</ispartof><rights>2024 The Electrochemical Society (“ECS”). Published on behalf of ECS by IOP Publishing Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><cites>FETCH-LOGICAL-c307t-900272925d7399bd4019b1c5ce4ff0a7e77c0ac15019bf67b8120675c066085c3</cites><orcidid>0000-0001-6280-7668</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Liu, Pengzhan</creatorcontrib><creatorcontrib>Kang, Chul</creatorcontrib><creatorcontrib>Park, Kihong</creatorcontrib><creatorcontrib>Jeon, Sanghuck</creatorcontrib><creatorcontrib>Wang, Ziyang</creatorcontrib><creatorcontrib>Lee, Hyeonjeong</creatorcontrib><creatorcontrib>Jeong, Hyunjin</creatorcontrib><creatorcontrib>Lee, Euihaeng</creatorcontrib><creatorcontrib>Kim, Taesung</creatorcontrib><title>Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing</title><title>ECS journal of solid state science and technology</title><addtitle>JSS</addtitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><description>Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspection, the polishing protocol plays a crucial role in effective process management. In fabrication scenarios, protocol revision is a convenient and practical approach for problem-solving. This research focuses on the study of head sweep direction, head sweep distance, and slurry sweep effects in oxide film polishing. Sweeping toward the outside resulted in an average increase of 12.66% removal amount for ceria and 11.57% for silica compared to fixed head polishing. Moreover, a longer head sweep distance reduced non-uniformity. While the slurry sweep exhibited a non-significant effect on the removal amount, it proved valuable in optimizing the removal amount profile.</description><subject>added defect</subject><subject>chemical mechanical polishing</subject><subject>dielectrics - SiO</subject><subject>head sweep</subject><subject>removal amount</subject><issn>2162-8769</issn><issn>2162-8777</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNp1UE1PAjEUbIwmEuTusTcvrrx2u9vt0RAQEiIm6Lkp_cCSZXfTLir_3t1AOOm7vJfJzOTNIHRP4IkQJsaU5DQpOOdjZdLCFFdocIGuL3cubtEoxh10kxeMp3SAXhfVl42t36rW1xWuHX6rSx8_bcBzqwxWlcHr8hDCEa-_rW3w1DmrW-wrvPrxxuKZL_dnja-2d-jGqTLa0XkP0cds-j6ZJ8vVy2LyvEx0CrxNBADlVNDM8FSIjWFAxIboTFvmHChuOdegNMl63OV8UxAKOc805DkUmU6HCE6-OtQxButkE_xehaMkIPtKZJ9Z9vnlqZJO8nCS-LqRu_oQqu5BuYtRklQyCYwBMNkY1zEf_2D-a_wLWBxuNA</recordid><startdate>20240401</startdate><enddate>20240401</enddate><creator>Liu, Pengzhan</creator><creator>Kang, Chul</creator><creator>Park, Kihong</creator><creator>Jeon, Sanghuck</creator><creator>Wang, Ziyang</creator><creator>Lee, Hyeonjeong</creator><creator>Jeong, Hyunjin</creator><creator>Lee, Euihaeng</creator><creator>Kim, Taesung</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0001-6280-7668</orcidid></search><sort><creationdate>20240401</creationdate><title>Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing</title><author>Liu, Pengzhan ; Kang, Chul ; Park, Kihong ; Jeon, Sanghuck ; Wang, Ziyang ; Lee, Hyeonjeong ; Jeong, Hyunjin ; Lee, Euihaeng ; Kim, Taesung</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c307t-900272925d7399bd4019b1c5ce4ff0a7e77c0ac15019bf67b8120675c066085c3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>added defect</topic><topic>chemical mechanical polishing</topic><topic>dielectrics - SiO</topic><topic>head sweep</topic><topic>removal amount</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Pengzhan</creatorcontrib><creatorcontrib>Kang, Chul</creatorcontrib><creatorcontrib>Park, Kihong</creatorcontrib><creatorcontrib>Jeon, Sanghuck</creatorcontrib><creatorcontrib>Wang, Ziyang</creatorcontrib><creatorcontrib>Lee, Hyeonjeong</creatorcontrib><creatorcontrib>Jeong, Hyunjin</creatorcontrib><creatorcontrib>Lee, Euihaeng</creatorcontrib><creatorcontrib>Kim, Taesung</creatorcontrib><collection>CrossRef</collection><jtitle>ECS journal of solid state science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Pengzhan</au><au>Kang, Chul</au><au>Park, Kihong</au><au>Jeon, Sanghuck</au><au>Wang, Ziyang</au><au>Lee, Hyeonjeong</au><au>Jeong, Hyunjin</au><au>Lee, Euihaeng</au><au>Kim, Taesung</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing</atitle><jtitle>ECS journal of solid state science and technology</jtitle><stitle>JSS</stitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><date>2024-04-01</date><risdate>2024</risdate><volume>13</volume><issue>4</issue><spage>44004</spage><pages>44004-</pages><issn>2162-8769</issn><eissn>2162-8777</eissn><coden>EJSSBG</coden><abstract>Chemical mechanical polishing (CMP) has undergone rapid advancements in global and local planarization. The synergy between the process control and the consumables is critical to overall CMP performance. In addition to optimizing consumables and equipment including a polisher, metrology, and inspection, the polishing protocol plays a crucial role in effective process management. In fabrication scenarios, protocol revision is a convenient and practical approach for problem-solving. This research focuses on the study of head sweep direction, head sweep distance, and slurry sweep effects in oxide film polishing. Sweeping toward the outside resulted in an average increase of 12.66% removal amount for ceria and 11.57% for silica compared to fixed head polishing. Moreover, a longer head sweep distance reduced non-uniformity. While the slurry sweep exhibited a non-significant effect on the removal amount, it proved valuable in optimizing the removal amount profile.</abstract><pub>IOP Publishing</pub><doi>10.1149/2162-8777/ad38d8</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0001-6280-7668</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2162-8769
ispartof ECS journal of solid state science and technology, 2024-04, Vol.13 (4), p.44004
issn 2162-8769
2162-8777
language eng
recordid cdi_iop_journals_10_1149_2162_8777_ad38d8
source Institute of Physics
subjects added defect
chemical mechanical polishing
dielectrics - SiO
head sweep
removal amount
title Investigation of Polisher Head and Slurry Sweep Effect in Oxide Film Polishing
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T01%3A17%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Investigation%20of%20Polisher%20Head%20and%20Slurry%20Sweep%20Effect%20in%20Oxide%20Film%20Polishing&rft.jtitle=ECS%20journal%20of%20solid%20state%20science%20and%20technology&rft.au=Liu,%20Pengzhan&rft.date=2024-04-01&rft.volume=13&rft.issue=4&rft.spage=44004&rft.pages=44004-&rft.issn=2162-8769&rft.eissn=2162-8777&rft.coden=EJSSBG&rft_id=info:doi/10.1149/2162-8777/ad38d8&rft_dat=%3Ciop_cross%3Ejssad38d8%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c307t-900272925d7399bd4019b1c5ce4ff0a7e77c0ac15019bf67b8120675c066085c3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true