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Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals

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Bibliographic Details
Published in:	ECS journal of solid state science and technology 2024-12, Vol.13 (12)
Main Authors:	Nikolaev, V. I., Polyakov, A. Y., Krymov, V. M., Saranin, D. S., Chernykh, A. V., Vasilev, A. A., Schemerov, I. V., Romanov, A. A., Matros, N. R., Kochkova, A. I., Gostishchev, P., Chernykh, S. V., Shapenkov, S. V., Butenko, P. N., Yakimov, E. B., Pearton, S. J.
Format:	Article
Language:	English
Subjects:	deep level transient spectroscopy gallium oxide microelectronics - semiconductor materials semiconductors
Online Access:	Get full text
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