Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals

Saved in:
Bibliographic Details
Published in:ECS journal of solid state science and technology 2024-12, Vol.13 (12)
Main Authors: Nikolaev, V. I., Polyakov, A. Y., Krymov, V. M., Saranin, D. S., Chernykh, A. V., Vasilev, A. A., Schemerov, I. V., Romanov, A. A., Matros, N. R., Kochkova, A. I., Gostishchev, P., Chernykh, S. V., Shapenkov, S. V., Butenko, P. N., Yakimov, E. B., Pearton, S. J.
Format: Article
Language:English
Subjects:
deep level transient spectroscopy
gallium oxide
microelectronics - semiconductor materials
semiconductors
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page
container_issue 12
container_start_page
container_title ECS journal of solid state science and technology
container_volume 13
creator Nikolaev, V. I.
Polyakov, A. Y.
Krymov, V. M.
Saranin, D. S.
Chernykh, A. V.
Vasilev, A. A.
Schemerov, I. V.
Romanov, A. A.
Matros, N. R.
Kochkova, A. I.
Gostishchev, P.
Chernykh, S. V.
Shapenkov, S. V.
Butenko, P. N.
Yakimov, E. B.
Pearton, S. J.
description
doi_str_mv 10.1149/2162-8777/ad9ace
format article
fullrecord <record><control><sourceid>iop</sourceid><recordid>TN_cdi_iop_journals_10_1149_2162_8777_ad9ace</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>jssad9ace</sourcerecordid><originalsourceid>FETCH-LOGICAL-i155t-b8ea4b70afe7d1ca6ed84a0601be5b75b0d9f4f52c8bf2f3ebc3310808a0d1d3</originalsourceid><addsrcrecordid>eNptUE1Lw0AQXUTBUnv3uEcPxuxXspujBG0L1RzMfdlP3ChJyKYH_Vn-EH-TW1p6chh4w-PNDO8BcIvRA8asygkuSSY457mylTLuAizO1OV5LqtrsIqxQ6lKwTglC_DSTmqEb7OaXYShh2P2Gpq8z9aKNBRu3Oymodv3Zg5DH-HQw_p7MO-T-owfAf7-nHT19BXnxN2AK5_ArU64BO3zU1tvsl2z3taPuyzgopgzLZximiPlHbfYqNJZwRQqEdau0LzQyFae-YIYoT3x1GlDKUYCCYUstnQJ7o9nwzDKbthPfXomMZKHMOTBrTw4l8cwkvzuH3kX0wqVmKSmCDE5Wk__AETaYNA</addsrcrecordid><sourcetype>Enrichment Source</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals</title><source>Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)</source><creator>Nikolaev, V. I. ; Polyakov, A. Y. ; Krymov, V. M. ; Saranin, D. S. ; Chernykh, A. V. ; Vasilev, A. A. ; Schemerov, I. V. ; Romanov, A. A. ; Matros, N. R. ; Kochkova, A. I. ; Gostishchev, P. ; Chernykh, S. V. ; Shapenkov, S. V. ; Butenko, P. N. ; Yakimov, E. B. ; Pearton, S. J.</creator><creatorcontrib>Nikolaev, V. I. ; Polyakov, A. Y. ; Krymov, V. M. ; Saranin, D. S. ; Chernykh, A. V. ; Vasilev, A. A. ; Schemerov, I. V. ; Romanov, A. A. ; Matros, N. R. ; Kochkova, A. I. ; Gostishchev, P. ; Chernykh, S. V. ; Shapenkov, S. V. ; Butenko, P. N. ; Yakimov, E. B. ; Pearton, S. J.</creatorcontrib><identifier>ISSN: 2162-8769</identifier><identifier>EISSN: 2162-8777</identifier><identifier>DOI: 10.1149/2162-8777/ad9ace</identifier><identifier>CODEN: EJSSBG</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>deep level transient spectroscopy ; gallium oxide ; microelectronics - semiconductor materials ; semiconductors</subject><ispartof>ECS journal of solid state science and technology, 2024-12, Vol.13 (12)</ispartof><rights>2024 The Author(s). Published on behalf of The Electrochemical Society by IOP Publishing Limited</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0001-9193-8106 ; 0000-0001-6898-6126 ; 0000-0003-4241-5565 ; 0000-0001-6498-1256</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Nikolaev, V. I.</creatorcontrib><creatorcontrib>Polyakov, A. Y.</creatorcontrib><creatorcontrib>Krymov, V. M.</creatorcontrib><creatorcontrib>Saranin, D. S.</creatorcontrib><creatorcontrib>Chernykh, A. V.</creatorcontrib><creatorcontrib>Vasilev, A. A.</creatorcontrib><creatorcontrib>Schemerov, I. V.</creatorcontrib><creatorcontrib>Romanov, A. A.</creatorcontrib><creatorcontrib>Matros, N. R.</creatorcontrib><creatorcontrib>Kochkova, A. I.</creatorcontrib><creatorcontrib>Gostishchev, P.</creatorcontrib><creatorcontrib>Chernykh, S. V.</creatorcontrib><creatorcontrib>Shapenkov, S. V.</creatorcontrib><creatorcontrib>Butenko, P. N.</creatorcontrib><creatorcontrib>Yakimov, E. B.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><title>Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals</title><title>ECS journal of solid state science and technology</title><addtitle>JSS</addtitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><subject>deep level transient spectroscopy</subject><subject>gallium oxide</subject><subject>microelectronics - semiconductor materials</subject><subject>semiconductors</subject><issn>2162-8769</issn><issn>2162-8777</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2024</creationdate><recordtype>article</recordtype><recordid>eNptUE1Lw0AQXUTBUnv3uEcPxuxXspujBG0L1RzMfdlP3ChJyKYH_Vn-EH-TW1p6chh4w-PNDO8BcIvRA8asygkuSSY457mylTLuAizO1OV5LqtrsIqxQ6lKwTglC_DSTmqEb7OaXYShh2P2Gpq8z9aKNBRu3Oymodv3Zg5DH-HQw_p7MO-T-owfAf7-nHT19BXnxN2AK5_ArU64BO3zU1tvsl2z3taPuyzgopgzLZximiPlHbfYqNJZwRQqEdau0LzQyFae-YIYoT3x1GlDKUYCCYUstnQJ7o9nwzDKbthPfXomMZKHMOTBrTw4l8cwkvzuH3kX0wqVmKSmCDE5Wk__AETaYNA</recordid><startdate>20241202</startdate><enddate>20241202</enddate><creator>Nikolaev, V. I.</creator><creator>Polyakov, A. Y.</creator><creator>Krymov, V. M.</creator><creator>Saranin, D. S.</creator><creator>Chernykh, A. V.</creator><creator>Vasilev, A. A.</creator><creator>Schemerov, I. V.</creator><creator>Romanov, A. A.</creator><creator>Matros, N. R.</creator><creator>Kochkova, A. I.</creator><creator>Gostishchev, P.</creator><creator>Chernykh, S. V.</creator><creator>Shapenkov, S. V.</creator><creator>Butenko, P. N.</creator><creator>Yakimov, E. B.</creator><creator>Pearton, S. J.</creator><general>IOP Publishing</general><scope>O3W</scope><scope>TSCCA</scope><orcidid>https://orcid.org/0000-0001-9193-8106</orcidid><orcidid>https://orcid.org/0000-0001-6898-6126</orcidid><orcidid>https://orcid.org/0000-0003-4241-5565</orcidid><orcidid>https://orcid.org/0000-0001-6498-1256</orcidid></search><sort><creationdate>20241202</creationdate><title>Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals</title><author>Nikolaev, V. I. ; Polyakov, A. Y. ; Krymov, V. M. ; Saranin, D. S. ; Chernykh, A. V. ; Vasilev, A. A. ; Schemerov, I. V. ; Romanov, A. A. ; Matros, N. R. ; Kochkova, A. I. ; Gostishchev, P. ; Chernykh, S. V. ; Shapenkov, S. V. ; Butenko, P. N. ; Yakimov, E. B. ; Pearton, S. J.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i155t-b8ea4b70afe7d1ca6ed84a0601be5b75b0d9f4f52c8bf2f3ebc3310808a0d1d3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2024</creationdate><topic>deep level transient spectroscopy</topic><topic>gallium oxide</topic><topic>microelectronics - semiconductor materials</topic><topic>semiconductors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nikolaev, V. I.</creatorcontrib><creatorcontrib>Polyakov, A. Y.</creatorcontrib><creatorcontrib>Krymov, V. M.</creatorcontrib><creatorcontrib>Saranin, D. S.</creatorcontrib><creatorcontrib>Chernykh, A. V.</creatorcontrib><creatorcontrib>Vasilev, A. A.</creatorcontrib><creatorcontrib>Schemerov, I. V.</creatorcontrib><creatorcontrib>Romanov, A. A.</creatorcontrib><creatorcontrib>Matros, N. R.</creatorcontrib><creatorcontrib>Kochkova, A. I.</creatorcontrib><creatorcontrib>Gostishchev, P.</creatorcontrib><creatorcontrib>Chernykh, S. V.</creatorcontrib><creatorcontrib>Shapenkov, S. V.</creatorcontrib><creatorcontrib>Butenko, P. N.</creatorcontrib><creatorcontrib>Yakimov, E. B.</creatorcontrib><creatorcontrib>Pearton, S. J.</creatorcontrib><collection>Institute of Physics Open Access Journal Titles</collection><collection>IOPscience (Open Access)</collection><jtitle>ECS journal of solid state science and technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nikolaev, V. I.</au><au>Polyakov, A. Y.</au><au>Krymov, V. M.</au><au>Saranin, D. S.</au><au>Chernykh, A. V.</au><au>Vasilev, A. A.</au><au>Schemerov, I. V.</au><au>Romanov, A. A.</au><au>Matros, N. R.</au><au>Kochkova, A. I.</au><au>Gostishchev, P.</au><au>Chernykh, S. V.</au><au>Shapenkov, S. V.</au><au>Butenko, P. N.</au><au>Yakimov, E. B.</au><au>Pearton, S. J.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals</atitle><jtitle>ECS journal of solid state science and technology</jtitle><stitle>JSS</stitle><addtitle>ECS J. Solid State Sci. Technol</addtitle><date>2024-12-02</date><risdate>2024</risdate><volume>13</volume><issue>12</issue><issn>2162-8769</issn><eissn>2162-8777</eissn><coden>EJSSBG</coden><pub>IOP Publishing</pub><doi>10.1149/2162-8777/ad9ace</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0001-9193-8106</orcidid><orcidid>https://orcid.org/0000-0001-6898-6126</orcidid><orcidid>https://orcid.org/0000-0003-4241-5565</orcidid><orcidid>https://orcid.org/0000-0001-6498-1256</orcidid><oa>free_for_read</oa></addata></record>
fulltext fulltext
identifier ISSN: 2162-8769
ispartof ECS journal of solid state science and technology, 2024-12, Vol.13 (12)
issn 2162-8769
2162-8777
language eng
recordid cdi_iop_journals_10_1149_2162_8777_ad9ace
source Institute of Physics:Jisc Collections:IOP Publishing Read and Publish 2024-2025 (Reading List)
subjects deep level transient spectroscopy
gallium oxide
microelectronics - semiconductor materials
semiconductors
title Trap States in p-NiO/n-Ga2O3 Heterojunctions on Czochralski β-Ga2O3 Crystals
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-06T06%3A59%3A00IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Trap%20States%20in%20p-NiO/n-Ga2O3%20Heterojunctions%20on%20Czochralski%20%CE%B2-Ga2O3%20Crystals&rft.jtitle=ECS%20journal%20of%20solid%20state%20science%20and%20technology&rft.au=Nikolaev,%20V.%20I.&rft.date=2024-12-02&rft.volume=13&rft.issue=12&rft.issn=2162-8769&rft.eissn=2162-8777&rft.coden=EJSSBG&rft_id=info:doi/10.1149/2162-8777/ad9ace&rft_dat=%3Ciop%3Ejssad9ace%3C/iop%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i155t-b8ea4b70afe7d1ca6ed84a0601be5b75b0d9f4f52c8bf2f3ebc3310808a0d1d3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true