Double-Pattern Textured ZnO:Ga Thin Films Fabricated by an APPJ and an DC Sputtering

Here, double-pattern textured gallium doped zinc oxide (GZO) films were achieved by inserting organosilicon underlayers deposited from an atmospheric pressure plasma jet (APPJ) between sputtered GZO films and glass substrates. The electro-optical characteristics of the textured GZO films were contro...

Full description

Saved in:
Bibliographic Details
Published in:ECS solid state letters 2012-08, Vol.1 (3), p.P48-P50
Main Authors: Yu, Shu-Hung, Ho, Po-Ching, Yang, Teng-Wei, Bi, Chien-Chung, Yeh, Chih-Hung, Chang, Chun-Yen
Format: Article
Language:English
Citations: Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Here, double-pattern textured gallium doped zinc oxide (GZO) films were achieved by inserting organosilicon underlayers deposited from an atmospheric pressure plasma jet (APPJ) between sputtered GZO films and glass substrates. The electro-optical characteristics of the textured GZO films were controlled by the haze of organosilicon underlayers. All GZO films were thermally annealed in high vacuum to improve film quality. Post-annealed textured GZO films exhibited an average optical transmittance of about 80% in a wide range. Hall measurements showed Hall mobility above 26 cm2/V-s, carrier concentration around 2.4×1020 cm−3 and resistivity below 9.91×10−4 Ω-cm.
ISSN:2162-8742
2162-8750
DOI:10.1149/2.003203ssl