Degradation Characteristics of AlGaN/GaN MOS-Heterostructure FETs by Alpha-Particle Irradiation

AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) and schottky HFETs were irradiated with 18 MeV alpha-particles. Irradiated devices showed degradation in current-voltage (I-V) and capacitance-voltage (C-V) characteristics. After irradiation, both devices exhib...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2017-01, Vol.6 (11), p.S3030-S3033
Main Authors: Keum, Dongmin, Cho, Geunho, Kim, Hyungtak
Format: Article
Language:English
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Summary:AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors (MOS-HFETs) and schottky HFETs were irradiated with 18 MeV alpha-particles. Irradiated devices showed degradation in current-voltage (I-V) and capacitance-voltage (C-V) characteristics. After irradiation, both devices exhibited the positive shift of threshold voltage (Vth) and the increase of on-resistance (Ron). We also observed the increase of contact (RC) and sheet resistance (Rsh) as irradiation fluence increased. Post-irradiation characteristics were attributed to irradiation-induced displacement damage with strong dependence on fluence. Hall pattern measurement confirmed significant degradation of carrier transport property by alpha-particle irradiation. Extracted density of oxide interface states was also increased after irradiation.
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0071711jss