Laser Lift-Off Mechanisms of GaN Epi-Layer Grown on Pattern Sapphire Substrate

Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2015-01, Vol.4 (2), p.R20-R22
Main Authors: Chang, Tai-Min, Fang, Hsin-Kai, Liao, Cheng, Hsu, Wen-Yang, Wu, YewChung Sermon
Format: Article
Language:English
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Summary:Wafer bonding and laser lift-off (LLO) processes were employed to fabricate pattern sapphire thin-GaN light-emitting diodes LEDs (PT-LED). During the LLO process, the required laser energy for PT-LED was much higher than that for flat thin-GaN LED (FT-LED). The yield rate of PT-LED was low, and the leakage current was high. In this study, the laser lift-off mechanisms of PT-LEDs were investigated.
ISSN:2162-8769
2162-8777
DOI:10.1149/2.0101502jss