Communication-Potential of the π-Gate InAs HEMTs for High-Speed and Low-Power Logic Applications

Composite channel (In0.65Ga0.35As/InAs/ In0.65Ga0.35As) high electron mobility transistors (HEMTs) with π-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the π-gate device for evaluation. The π-gate device...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2019, Vol.8 (6), p.P319-P321
Main Authors: Yao, Jing-Neng, Lin, Yueh-Chin, Wong, Ying-Chieh, Huang, Ting-Jui, Hsu, Heng-Tung, Sze, Simon M., Chang, Edward Yi
Format: Article
Language:English
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Summary:Composite channel (In0.65Ga0.35As/InAs/ In0.65Ga0.35As) high electron mobility transistors (HEMTs) with π-gate structure were investigated for high-speed and low-power logic applications. The conventional and tri-gate MESA HEMTs were compared with the π-gate device for evaluation. The π-gate device exhibited the best maximum transconductance value of 1584 mS/mm, on-state current of 332mA/mm, subthreshold swing (SS) of 78.1 mV/decade, and ION/IOFF ratio of 3 × 104 at VDS = 0.5 V at room temperature. These results indicated that the designed π-gate InAs devices improve the electrical characteristics of InAs HEMTs for high-speed and low-power logic applications.
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0141906jss