Noncontact Monitoring of Activation and Residual Damage of Dual Implanted Silicon Using Room Temperature Photoluminescence

Phosphorous (P+ 1.0 MeV, 4.0 × 1013 cm−2) and boron (B+ 10 keV, 3.0 × 1014 cm−2) implanted p−-Si(100) wafers were annealed with a wide range of annealing conditions (350-800°C, 60-150 s) in a commercially available hot wall-based, rapid thermal annealing (RTA) system. Significant variations in sheet...

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Bibliographic Details
Published in:ECS journal of solid state science and technology 2015-01, Vol.4 (12), p.P436-P440
Main Authors: Yoo, Woo Sik, Jeon, Bong Seok, Kim, Sang Deok, Ishigaki, Toshikazu, Kang, Kitaek
Format: Article
Language:English
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Summary:Phosphorous (P+ 1.0 MeV, 4.0 × 1013 cm−2) and boron (B+ 10 keV, 3.0 × 1014 cm−2) implanted p−-Si(100) wafers were annealed with a wide range of annealing conditions (350-800°C, 60-150 s) in a commercially available hot wall-based, rapid thermal annealing (RTA) system. Significant variations in sheet resistance were observed in different RTA conditions. Secondary ion mass spectroscopy (SIMS) P and B depth profiles did not show significant change. Room temperature photoluminescence (RTPL) spectra were measured from all wafers under two different excitation wavelengths (650 and 785 nm). RTPL spectra showed large variations in intensity and wavelength distribution corresponding to the sheet resistance.
ISSN:2162-8769
2162-8769
2162-8777
DOI:10.1149/2.0191512jss