Fabrication of a magnesium-ion-conducting magnesium phosphate electrolyte film using atomic layer deposition

We successfully fabricated a magnesium phosphate film as a solid-state electrolyte (SSE) using plasma-assisted atomic layer deposition (ALD). By developing a ternary process consisting of alternative Mg-O and P-O sub-cycles, very uniform amorphous films were formed at relatively low deposition tempe...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-06, Vol.59 (SI), p.SIIG08
Main Authors: Tsuruoka, Tohru, Tsujita, Takuji, Su, Jin, Nishitani, Yu, Hamamura, Tomofumi, Inatomi, Yuu, Nakura, Kensuke, Terabe, Kazuya
Format: Article
Language:English
Subjects:
atomic layer deposition
Atomic layer epitaxy
Electrolytes
Hopping conduction
magnesium electrolyte
Magnesium phosphate
Structural stability
thin film
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Summary:We successfully fabricated a magnesium phosphate film as a solid-state electrolyte (SSE) using plasma-assisted atomic layer deposition (ALD). By developing a ternary process consisting of alternative Mg-O and P-O sub-cycles, very uniform amorphous films were formed at relatively low deposition temperatures ranging from 125 °C to 300 °C. It was found that lower temperature deposition induces multi-bonding states in the phosphate matrix, which forms a mixture of pyrophosphates and metaphosphates. This results in increased hopping conduction of Mg ions in the disordered matrix. The film deposited at 125 °C exhibited higher ionic conductivities with a smaller activation energy than a sputtered magnesium phosphate film, which indicates the usefulness of ALD in fabricating Mg ion-conducting SSE films. The ALD film fabricated also showed reproducible conductivity and structural stability up to 400 °C.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab79e8