Measurement of shunt resistance and conduction band offset in Cu(In, Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence

Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1−xGaxSe2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the...

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Published in:Japanese Journal of Applied Physics 2020-05, Vol.59 (5)
Main Authors: Swartz, Craig H., Paul, Sanjoy, Mansfield, Lorelle M., Li, Jian V., Holtz, Mark W.
Format: Article
Language:English
Subjects:
band offset
CIGS
CIGSe
Cu(In,Ga)Se2
illumination dependent open-circuit voltage
illumination dependent photoluminescence intensity
Injection dependence
Photovoltaic device characterization
quasi-Fermi-level splitting
Shockley-Read-Hall
SOLAR ENERGY
SRH recombination
temperature dependent open-circuit voltage
temperature dependent photoluminescence intensity
Voc
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creator Swartz, Craig H.
Paul, Sanjoy
Mansfield, Lorelle M.
Li, Jian V.
Holtz, Mark W.
description Joint analysis studies of open-circuit voltage and photoluminescence intensity (PL-I) are reported for CuIn1−xGaxSe2 (CIGSe) solar cells. A range of compositions are investigated, including constant x = 0.35 and x = 0.55 as well as a graded composition profile having a minimum of x = 0.25. Both the open-circuit voltage and PL-I are measured as functions of temperature and illumination intensity. With these two measurements, a full model-based fitting of the temperature and illumination dependence allows extraction of the effects of window layer band offset and shunt resistance, in addition to bulk and interface recombination parameters. To quantitatively analyze the two distinct measurements jointly, the absolute PL-I is measured to obtain quasi-Fermi-level splitting.
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source Institute of Physics
subjects band offset
CIGS
CIGSe
Cu(In,Ga)Se2
illumination dependent open-circuit voltage
illumination dependent photoluminescence intensity
Injection dependence
Photovoltaic device characterization
quasi-Fermi-level splitting
Shockley-Read-Hall
SOLAR ENERGY
SRH recombination
temperature dependent open-circuit voltage
temperature dependent photoluminescence intensity
Voc
title Measurement of shunt resistance and conduction band offset in Cu(In, Ga)Se2 solar cells through joint analysis of temperature and intensity dependence of open-circuit voltage and photoluminescence
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