Saturated detection efficiency of single-photon detector based on an InGaAs/InP single-photon avalanche diode gated with a large-amplitude sinusoidal voltage

We report on the high-efficiency single-photon detection at 1550 nm using an InGaAs/InP single-photon avalanche diode (SPAD) gated with a large-amplitude sinusoidal voltage. The gating realizes the excess bias voltage up to 12.0 V, which strongly enhances the photon-detection efficiency (PDE) while...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2020-07, Vol.59 (7), p.72004
Main Authors: Tada, Akiko, Namekata, Naoto, Inoue, Shuichiro
Format: Article
Language:English
Subjects:
sine-wave gating
single-photon avalanche diode
Single-photon detector
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Summary:We report on the high-efficiency single-photon detection at 1550 nm using an InGaAs/InP single-photon avalanche diode (SPAD) gated with a large-amplitude sinusoidal voltage. The gating realizes the excess bias voltage up to 12.0 V, which strongly enhances the photon-detection efficiency (PDE) while the dark counts and the afterpulses are suppressed by operating the SPAD with a short gate duration at room temperature. The PDE of 55.9% was achieved with a dark count probability per gate of 4.7 × 10-4 and an afterpulse probability of 4.8% at the gate repetition frequency of 1.27 GHz. The PDE was saturated by the high excess bias voltage, which indicates that the gated InGaAs/InP SPAD has the limited detection efficiency.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ab9625