Numerical simulation of the piezoresistive effect of βGa2O3 in the direction

β-Ga2O3 has a high potential for power device applications because of a high Baliga’s figure and the availability of large-scale wafers. However, the piezoresistive effect of β-Ga2O3 has not been investigated in detail, and its piezoresistive coefficient has not been reported. This study evaluates t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2021-06, Vol.60 (SC)
Main Authors: Takahashi, Naoki, Sugiura, Takaya, Sakota, Ryohei, Nakano, Nobuhiko
Format: Article
Language:English
Subjects:
Coefficients
Gallium oxide
Gallium oxides
Mathematical models
Mechanical stress sensor
MEMS
Numerical simulation
Piezoresistive effect
Simulation
Thermal analysis
Wide bandgap semiconductor
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Summary:β-Ga2O3 has a high potential for power device applications because of a high Baliga’s figure and the availability of large-scale wafers. However, the piezoresistive effect of β-Ga2O3 has not been investigated in detail, and its piezoresistive coefficient has not been reported. This study evaluates the piezoresistive coefficient of β-Ga2O3 in the direction using a mechanical stress simulator and a device simulator, which includes our piezoresistive effect model. In this study, the piezoresistive effect model and simulation method are applied to β-Ga2O3 for the first time. The piezoresistor model of β-Ga2O3 is simulated to evaluate the piezoresistive coefficient of β-Ga2O3. The experimentally obtained gauge factor with and without the contact effect is −5.8 and −3.6, respectively. The piezoresistive coefficient with and without the contact effect is −2.0 × 10−11 Pa−1 and −1.2 × 10−11 Pa−1, respectively. The piezoresistive coefficient is used to evaluate the piezoresistive effect at 1000 °C through thermal analysis.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/abe7ff