Use of anti-solvent to enhance thermoelectric response of hybrid halide perovskite thin films

Hybrid halide perovskite research has recently been focused on thermoelectric energy harvesting due to the cost-effectiveness of the fabrication approach and to the ultra-low thermal conductivity. To achieve high performance, tuning of the electrical conductivity is a key parameter that is influence...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-06, Vol.61 (SE), p.SE1019
Main Authors: Saini, Shrikant, Matsumoto, Izuki, Kishishita, Sakura, Baranwal, Ajay Kumar, Yabuki, Tomohide, Hayase, Shuzi, Miyazaki, Koji
Format: Article
Language:English
Subjects:
anti-solvent
Carrier density
Charge density
Current carriers
Electrical resistivity
Energy harvesting
Grain boundaries
hybrid halide perovskites
Lead free
Oxidation
Parameters
Perovskites
Photoelectrons
Power factor
Room temperature
Seebeck effect
Solvents
Thermal conductivity
thermoelectric
Thermoelectricity
Thin films
Tuning
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Summary:Hybrid halide perovskite research has recently been focused on thermoelectric energy harvesting due to the cost-effectiveness of the fabrication approach and to the ultra-low thermal conductivity. To achieve high performance, tuning of the electrical conductivity is a key parameter that is influenced by grain boundary scattering and charge carrier density. The fabrication process allows the tuning of these parameters. We report the use of anti-solvent to enhance the thermoelectric performance of lead-free hybrid halide perovskite (CH 3 NH 3 SnI 3 ) thin films. Thin films with anti-solvent show higher connectivity in grains and higher Sn +4 oxidation states which result in the enhancement of the value of electrical conductivity. The thin films were prepared by a cost-effective wet process. Structural and chemical characterizations were performed using X-ray diffraction, scanning electron microscopy, and X-ray photoelectron spectroscopy. The values of electrical conductivity and the Seebeck coefficient were measured near room temperature. A high value of the power factor (1.55 μ W m −1 K −2 at 320 K) was achieved for thin films treated with anti-solvent.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac4adb