Atomic diffusion bonding in air using Ag films

Atomic diffusion bonding (ADB) of wafers at room temperature in air was studied using Ag films. Using an ultra-high vacuum magnetron sputtering system, Ag (20 nm) films with Ti (5 nm) underlayers were deposited. The propagation speed of crystal lattice rearrangement in the bonding process decreased...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-06, Vol.61 (SF), p.SF1003
Main Authors: Watabe, Yuki, Goto, Fuki, Uomoto, Miyuki, Shimatsu, Takehito
Format: Article
Language:English
Subjects:
adhesion
atomic diffusion bonding in air
Bonding
Chemical bonds
cohesion
crystal lattice rearrangement
Crystal lattices
Diffusion welding
High vacuum
Magnetron sputtering
Performance degradation
Propagation
Room temperature
room temperature bonding
silver films
Surface energy
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Summary:Atomic diffusion bonding (ADB) of wafers at room temperature in air was studied using Ag films. Using an ultra-high vacuum magnetron sputtering system, Ag (20 nm) films with Ti (5 nm) underlayers were deposited. The propagation speed of crystal lattice rearrangement in the bonding process decreased with an increased exposure time of film surfaces to air ( t exp ). Propagation did not occur at t exp of 500 s. The cohesion of Ag film surfaces by film surface exposure to air and reduction of the Ag film surface energy by Ag oxide or sulfide formation probably cause ADB performance degradation.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac5760