GaN channel waveguide with vertically polarity inversion formed by surface activated bonding for wavelength conversion

We proposed a nitride semiconductor transverse quasi-phase-matched wavelength conversion device with a polarity inverted structure along the vertical direction formed by surface-activated bonding and etching processes. Inductively coupled plasma etching of a GaN layer with maintaining a root mean sq...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2022-05, Vol.61 (5), p.50902
Main Authors: Yokoyama, Naoki, Tanabe, Ryo, Yasuda, Yuma, Honda, Hiroto, Ichikawa, Shuhei, Fujiwara, Yasufumi, Hikosaka, Toshiki, Uemukai, Masahiro, Tanikawa, Tomoyuki, Katayama, Ryuji
Format: Article
Language:English
Subjects:
Bonding
Conversion
Gallium nitrides
ICP-RIE
Inductively coupled plasma
Nitride Semiconductors
Phase matching
Plasma etching
Surface Activated Bonding
Thickness
Waveguides
Wavelength Conversion
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Summary:We proposed a nitride semiconductor transverse quasi-phase-matched wavelength conversion device with a polarity inverted structure along the vertical direction formed by surface-activated bonding and etching processes. Inductively coupled plasma etching of a GaN layer with maintaining a root mean square roughness of less than 2 nm in a 100 μ m square area was achieved even after deep etching of 1 μ m using Cl 2 /Ar mixture gas and optimizing the antenna and bias powers. This smooth etching enabled surface-activated bonding of the ultrathin GaN layer with designed thickness. The fabrication process of the GaN polarity inverted channel waveguide was established.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ac57ab