Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates

We demonstrated nanoplatelet In x Ga 1− x N pseudosubstrates with In content varying from 0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in-plane strain, thus allowing for the use of a thick active layer to reduce built-in polarization. The 15 nm thick InGa...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-02, Vol.62 (2), p.20902
Main Authors: Cai, Wentao, Wang, Jia, Park, Jeong-Hwan, Furusawa, Yuta, Cheong, Heajeong, Nitta, Shugo, Honda, Yoshio, Pristovsek, Markus, Amano, Hiroshi
Format: Article
Language:English
Subjects:
Blue shift
Cathodoluminescence
crystal growth
Dislocation density
Indium gallium nitrides
InGaN
MOVPE
opto electronics
Photoluminescence
Plane strain
Platelets (materials)
Polarization
Red shift
Substrates
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Summary:We demonstrated nanoplatelet In x Ga 1− x N pseudosubstrates with In content varying from 0 to 0.3 on low-dislocation-density GaN substrates. These nanoplatelets efficiently relax in-plane strain, thus allowing for the use of a thick active layer to reduce built-in polarization. The 15 nm thick InGaN active layers grown under the same conditions on these nanoplatelets showed a remarkable cathodoluminescence redshift from 460 to 617 nm, suggesting enhanced In incorporation efficiency in InGaN nanoplatelets with higher In content. Moreover, the 617 nm-emitting sample presented an imperceptible blueshift under excitation-power-dependent photoluminescence, indicating a weak polarization field introduced by the high-In-content pseudosubstrates and the thick active layer.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acb74c