Characterization of magnesium channeled implantation layers in GaN(0001)

The effect of Mg channeled implantation into epitaxially grown gallium nitride (GaN) was studied using Hall-effect measurements, photoluminescence (PL), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and Rutherford backscattering spectroscopy (RBS). In the c...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-04, Vol.62 (SC), p.SC1080
Main Authors: Suyama, Atsushi, Kawanowa, Hitoshi, Minagawa, Hideaki, Maekawa, Junko, Nagamachi, Shinji, Aoki, Masahiko, Ohta, Akio, Makihara, Katsunori, Miyazaki, Seiichi
Format: Article
Language:English
Subjects:
Backscattering
channeled implantation
Crystal defects
Epitaxial growth
Gallium nitrides
GaN
Hall effect
Ion implantation
Magnesium
Photoluminescence
Point defects
RBS
Rutherford backscattering spectroscopy
Scanning transmission electron microscopy
SIMS
TEM
Transmission electron microscopy
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Summary:The effect of Mg channeled implantation into epitaxially grown gallium nitride (GaN) was studied using Hall-effect measurements, photoluminescence (PL), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM) and Rutherford backscattering spectroscopy (RBS). In the channeled implantation, deeper profiles were obtained with lower implantation energy and less damage compared to random implantation. The donor–acceptor pair signal at ∼3.28 eV, suggesting that Mg is activated, was confirmed by PL measurement when the ion dose and implantation energy are 1 × 10 14 cm −2 and 20 keV, respectively. However, even with channeled implantation, several types of defects including point defects and oblong defects as seen in the random implantation were observed by TEM/STEM analysis. RBS analysis showed slightly worse crystal qualities in channeled implantation compared to non-implanted samples. Mg channeled implantation is useful to achieve deeper profiles (>1 μ m), but further condition tuning of process will be necessary for practical application.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acb951