Crystalline phase control of BiVO4 thin films using RF sputtering

A selective fabrication method for monoclinic-scheelite (m-s) BiVO4 and tetragonal-zircon (t-z) BiVO4 thin films using radio fRequency (RF) sputtering from a single target was developed. The kinetic energy of the sputtered atoms was controlled by varying the sputtering power to obtain BiVO4 films wi...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-08, Vol.62 (SK), p.SK1001
Main Authors: Uezono, Namiki, Liu, Jiaqi, Pawar, Sachin A., Islam, Muhammad Monirul, Ikeda, Shigeru, Sakurai, Takeaki
Format: Article
Language:English
Subjects:
Bismuth oxides
BiVO
Kinetic energy
Phase control
photocatalyst
Photoelectric effect
Radio frequency
Scheelite
Sputtering
Thin films
Vanadates
Zircon
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Summary:A selective fabrication method for monoclinic-scheelite (m-s) BiVO4 and tetragonal-zircon (t-z) BiVO4 thin films using radio fRequency (RF) sputtering from a single target was developed. The kinetic energy of the sputtered atoms was controlled by varying the sputtering power to obtain BiVO4 films with m-s and t-z crystalline phases. Although the band gap of the t-z BiVO4 phase (3.0 eV) was larger than that of m-s BiVO4 (2.5 eV), the deposited t-z BiVO4 films showed a comparable photocurrent density (1.5 mA cm−2) at 1.23 V versus the reversible hydrogen electrode (400 W Xe lamp). This was mainly because of the reduced sputtering damage in the t-z BiVO4 crystal, which originated from the low sputtering power as well as the deep valence-band position in t-z BiVO4 that enabled the efficient utilization of the photocarriers. This work provides insights into crystalline phase control using the particle kinetic energy in sputtering.
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acbb85