Phenomenological model for predicting C x H y F z + ion etching yields of SiO2 and SiN x substrates

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2023-07, Vol.62 (SI)
Main Authors: Kawamoto, Akiko, Kataoka, Junji, Kuboi, Shuichi, Sasaki, Toshiyuki, Tamaoki, Naoki
Format: Article
Language:English
Subjects:
high aspect ratio etching
ion etching yield
plasma process
reactive ion etching
simulation
surface reaction
Online Access:Get full text
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ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/acc872