Ferroelectricity of Ce–Mn substituted ZnO thin films

In this study, we introduced Ce and Mn as new substitution elements to develop ferroelectricity in wurtzite-type ZnO thin films on Pt/Ti/SiO 2 /Si. By substituting (Ce,Mn) for Zn, we observed a decrease in the c / a ratio, which reached its minimum value of 1.582. The relative permittivity increased...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2024-01, Vol.63 (1), p.10902
Main Authors: Ogawa, Rei, Tamai, Atsuhiro, Tanaka, Kiyotaka, Adachi, Hideaki, Kanno, Isaku
Format: Article
Language:English
Subjects:
Coercivity
Dielectric loss
ferroelectric
Ferroelectricity
Permittivity
Silicon dioxide
thin film
Thin films
Wurtzite
Zinc oxide
ZnO
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Summary:In this study, we introduced Ce and Mn as new substitution elements to develop ferroelectricity in wurtzite-type ZnO thin films on Pt/Ti/SiO 2 /Si. By substituting (Ce,Mn) for Zn, we observed a decrease in the c / a ratio, which reached its minimum value of 1.582. The relative permittivity increased from 12 to 20 with increasing (Ce,Mn) concentration (2%–15%), while the dielectric loss remained low at about 0.01. The Zn(Ce,Mn)O thin films exhibited clear ferroelectric behavior with a remanent polarization of more than 80 μ C cm −2 and a coercive field of about 2.5 MV cm −1 .
ISSN:0021-4922
1347-4065
DOI:10.35848/1347-4065/ad1425