Single-phase high-quality semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates

Single-phase flat semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates grown by ammonia-free high-temperature metalorganic vapor phase epitaxy are firstly demonstrated. It is found that twins and basal-plane stacking faults are undetectable by X-ray diffraction and cross-sectional...

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Bibliographic Details
Published in:Applied physics express 2020-03, Vol.13 (3), p.35502
Main Authors: Shen, Xu-Qiang, Kojima, Kazutoshi, Okumura, Hajime
Format: Article
Language:English
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Summary:Single-phase flat semipolar (10-13) AlN epilayers on m-plane (10-10) sapphire substrates grown by ammonia-free high-temperature metalorganic vapor phase epitaxy are firstly demonstrated. It is found that twins and basal-plane stacking faults are undetectable by X-ray diffraction and cross-sectional characterization. An X-ray rocking curve (XRC) shows the full widths at half maximum (FWHM) of the (10-13) and the (0002) diffraction peaks from a ∼2.3 m thick AlN film as narrow as 322 and 373 arcsec, respectively, indicating a high structural quality. Semipolar AlN epilayers hold great promise for high performance deep-ultraviolet (DUV) optoelectronic device applications.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ab7486