Thermal-assisted contactless photoelectrochemical etching for GaN

Advanced contactless photoelectrochemical etching for GaN was conducted under the condition that the sulfate radicals (SO4 −) as the oxidizing agent were mainly produced from the S2O82− ions by heat. The generation rate of SO4 − was determined from the titration curve of the pH in the mixed solution...

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Bibliographic Details
Published in:Applied physics express 2020-04, Vol.13 (4), p.46501
Main Authors: Horikiri, Fumimasa, Fukuhara, Noboru, Ohta, Hiroshi, Asai, Naomi, Narita, Yoshinobu, Yoshida, Takehiro, Mishima, Tomoyoshi, Toguchi, Masachika, Miwa, Kazuki, Ogami, Hiroki, Sato, Taketomo
Format: Article
Language:English
Subjects:
etching
GaN
photoelectrochemical
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Summary:Advanced contactless photoelectrochemical etching for GaN was conducted under the condition that the sulfate radicals (SO4 −) as the oxidizing agent were mainly produced from the S2O82− ions by heat. The generation rate of SO4 − was determined from the titration curve of the pH in the mixed solutions between KOH (aq.) and K2S2O8 (aq.); it clearly increased with an increase in the S2O82− ion concentration. The highest etching rate of >25 nm min−1 was obtained in the "alkali-free" electrolyte of 0.25 mol dm−3 (NH4)2S2O8 (aq.) at 80 °C, which was approximately 10 times higher than that reported by previous studies.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ab7e09