Reliability characteristics of metal/ferroelectric-HfO2/IGZO/metal capacitor for non-volatile memory application

A metal/ferroelectric (FE)-HfO2/IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show tha...

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Bibliographic Details
Published in:Applied physics express 2020-07, Vol.13 (7)
Main Authors: Mo, Fei, Saraya, Takuya, Hiramoto, Toshiro, Kobayashi, Masaharu
Format: Article
Language:English
Subjects:
ferroelectric
IGZO
memories
reliability
Online Access:Get full text
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Summary:A metal/ferroelectric (FE)-HfO2/IGZO/metal capacitor was fabricated and investigated for 3D high-density memory application. The sharp interface is obtained without atomic interdiffusion. The capacitor shows ferroelectricity with a IGZO capping layer. The endurance and retention measurement show that the capacitor has up to 108 program/erase endurance cycles and a 10 year retention, respectively. The capacitor does not show the wake-up effect, which is beneficial for circuit design and manufacturing. The asymmetric imprint effect is attributed to the different band modulation in the accumulation and depletion states of IGZO.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ab9a92