Influences of hydrogen ion irradiation on NcVsi− formation in 4H-silicon carbide

Nitrogen-vacancy (NCVSi−) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi− center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revea...

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Bibliographic Details
Published in:Applied physics express 2021-02, Vol.14 (2)
Main Authors: Narahara, Takuma, Sato, Shin-ichiro, Kojima, Kazutoshi, Hijikata, Yasuto, Ohshima, Takeshi
Format: Article
Language:English
Subjects:
Near Infrared Photoluminescence
Nitrogen-Vacancy Centers in SiC
Quantum Technology
radiation induced defects
silicon carbide
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Summary:Nitrogen-vacancy (NCVSi−) center in 4H-SiC is spin defect with near-infrared luminescence at room temperature and a promising candidate for quantum technologies. This paper reports on NCVSi− center formation in N-doped 4H-SiCs by hydrogen ion irradiation and subsequent thermal annealing. It is revealed photoluminescence for NCVSi− centers suddenly appears above the fluence of 5.0 × 1015 cm−2 when annealed at 1000 °C. Appearance of a threshold fluence for their formation and/or activation has not been observed for other energetic particle irradiations. The possible mechanism is discussed based on the kinetics of hydrogen-related complexes and the majority carrier depletion caused by irradiation induced damage.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/abdc9e