GaN-based MIS-HEMTs with Al2O3 dielectric deposited by low-cost and environmental-friendly mist-CVD technique

We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendly mist chemical vapor deposition (mist-CVD) techni...

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Bibliographic Details
Published in:Applied physics express 2021-02, Vol.14 (3)
Main Authors: Low, Rui Shan, Asubar, Joel T., Baratov, Ali, Kamiya, Shunsuke, Nagase, Itsuki, Urano, Shun, Kawabata, Shinsaku, Tokuda, Hirokuni, Kuzuhara, Masaaki, Nakamura, Yusui, Naito, Kenta, Motoyama, Tomohiro, Yatabe, Zenji
Format: Article
Language:English
Subjects:
AlGaN/GaN
gallium nitride
HEMT
MIS
MIS-HEMT
mist-CVD
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Summary:We report on the fabrication and characterization of AlGaN/GaN metal-insulator-semiconductor (MIS) capacitors and high-electron-mobility transistors (MIS-HEMTs) using a 5 nm thick Al2O3 dielectric deposited by cost-effective and environmental-friendly mist chemical vapor deposition (mist-CVD) technique. Practically hysteresis-free capacitance-voltage profiles were obtained from the fabricated two-terminal MIS-capacitors indicating high quality of the mist-Al2O3/AlGaN interface. Compared with reference Schottky-gate HEMTs, mist MIS-HEMTs exhibited much improved performance including higher drain current on-to-off ratio, much lower gate leakage current in both forward and reverse directions and lower subthreshold swing. These results demonstrate the potential and viability of non-vacuum mist-CVD Al2O3 in the development of high-performance GaN-based MIS-HEMTs.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/abe19e