A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water

Thin films of AlN, AlGaN, and AlGaN-based device structures of approximately 1 cm 2 formed on a sapphire substrate were successfully exfoliated from the substrate by immersion in heated (115 °C) and pressurized (170 kPa) water. These thin films were crystalline, grown on periodically formed AlN nano...

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Published in:Applied physics express 2022-11, Vol.15 (11), p.116502
Main Authors: Matsubara, Eri, Hasegawa, Ryota, Nishibayashi, Toma, Yabutani, Ayumu, Yamada, Ryoya, Imoto, Yoshinori, Kondo, Ryosuke, Iwayama, Sho, Takeuchi, Tetsuya, Kamiyama, Satoshi, Shojiki, Kanako, Kumagai, Shinya, Miyake, Hideto, Iwaya, Motoaki
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Language:English
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AlGaN
AlN nanopillars
heated and pressurized water
substrate exfoliation
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cited_by cdi_FETCH-LOGICAL-c383t-66d8df2d0a2aea15f90a1e11818bf0eca72b48ab162d306523430764da15bdcb3
cites cdi_FETCH-LOGICAL-c383t-66d8df2d0a2aea15f90a1e11818bf0eca72b48ab162d306523430764da15bdcb3
container_end_page
container_issue 11
container_start_page 116502
container_title Applied physics express
container_volume 15
creator Matsubara, Eri
Hasegawa, Ryota
Nishibayashi, Toma
Yabutani, Ayumu
Yamada, Ryoya
Imoto, Yoshinori
Kondo, Ryosuke
Iwayama, Sho
Takeuchi, Tetsuya
Kamiyama, Satoshi
Shojiki, Kanako
Kumagai, Shinya
Miyake, Hideto
Iwaya, Motoaki
description Thin films of AlN, AlGaN, and AlGaN-based device structures of approximately 1 cm 2 formed on a sapphire substrate were successfully exfoliated from the substrate by immersion in heated (115 °C) and pressurized (170 kPa) water. These thin films were crystalline, grown on periodically formed AlN nanopillars. The water was permeated through intentional voids formed in the AlGaN or AlN crystalline layers by using periodic AlN nanopillars. The exfoliated AlGaN exhibited clear X-ray diffraction peaks from its (0002) plane diffraction. Transmission electron microscopy (TEM) confirmed that exfoliation introduced few additional dislocations and that the device structure was maintained.
doi_str_mv 10.35848/1882-0786/ac97dc
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source IOPscience journals; Institute of Physics
subjects AlGaN
AlN nanopillars
heated and pressurized water
substrate exfoliation
title A method for exfoliating AlGaN films from sapphire substrates using heated and pressurized water
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