Separate evaluation of interface and oxide hole traps in SiO2/GaN MOS structures with below- and above-gap light excitation

Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial in the fabrication of MOS transistors with high performance and reliability. In this study, we evaluated the hole traps in SiO _2 /GaN MOS structures through photo-assisted capacitance-voltage measurements. Below- and a...

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Bibliographic Details
Published in:Applied physics express 2024-01, Vol.17 (1), p.011003
Main Authors: Kobayashi, Takuma, Tomigahara, Kazuki, Nozaki, Mikito, Shimura, Takayoshi, Watanabe, Heiji
Format: Article
Language:English
Subjects:
gallium nitride
hole traps
interface
metal-oxide-semiconductor devices
silicon dioxide
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Summary:Understanding the traps in metal-oxide-semiconductor (MOS) structures is crucial in the fabrication of MOS transistors with high performance and reliability. In this study, we evaluated the hole traps in SiO _2 /GaN MOS structures through photo-assisted capacitance-voltage measurements. Below- and above-gap light was used to distinguish between the contributions of fast interface and slow oxide hole traps. While annealing in oxygen is effective in reducing the oxide hole traps, a high density of hole traps exceeding 10 ^12 cm ^−2 eV ^−1 remains at the interface. Although these traps are donor-type and thus hidden in n-type MOS structures, they could impair the switching performance of GaN MOS transistors.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ad120a