Fabrication of magnetic tunnel junctions with a metastable bcc Co3Mn disordered alloy as a bottom electrode

We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu cm−3. The transmission electron microscop...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2019-08, Vol.58 (8)
Main Authors: Kunimatsu, Kazuma, Tsuchiya, Tomoki, Elphick, Kelvin, Ichinose, Tomohiro, Suzuki, Kazuya Z., Hirohata, Atsufumi, Mizukami, Shigemi
Format: Article
Language:English
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Summary:We fabricated MgO barrier magnetic tunnel junctions (MTJs) with a Co3Mn alloy bottom and FeCoB top electrodes. The (001)-oriented epitaxial films of the metastable bcc Co3Mn disordered alloys obtained showed saturation magnetization of approximately 1640 emu cm−3. The transmission electron microscopy showed that the MgO barrier was epitaxially grown on the Co3Mn electrode. Tunnel magnetoresistance of approximately 150% was observed at room temperature after the annealing of MTJs at 350 °C, indicating that bcc Co3Mn alloys have relatively high spin polarization.
ISSN:0021-4922
1347-4065
DOI:10.7567/1347-4065/ab2f96