Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy

High concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have...

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Bibliographic Details
Published in:Applied physics express 2019-02, Vol.12 (2), p.21005
Main Authors: Nakamura, Minoru, Murakami, Susumu, Udono, Haruhiko
Format: Article
Language:English
Subjects:
deep-level transient spectroscopy
nitrogen-doped silicon
nitrogen-related deep donor center
nitrogen-vacancy complex
substitutional nitrogen
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Summary:High concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have measured the concentrations of these products by deep-level transient spectroscopy in the samples diffused with various concentrations of nickel. From the close examination of the depth profiles of the products and the anneal-out temperature of the DDC, this species is found to be the substitutional nitrogen and the structure molecule-like split nitrogen interstitials is suggested for the N-V complex.
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/aafde8