Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy

High concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have...

Full description

Saved in:
Bibliographic Details
Published in:Applied physics express 2019-02, Vol.12 (2), p.21005
Main Authors: Nakamura, Minoru, Murakami, Susumu, Udono, Haruhiko
Format: Article
Language:English
Subjects:
deep-level transient spectroscopy
nitrogen-doped silicon
nitrogen-related deep donor center
nitrogen-vacancy complex
substitutional nitrogen
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c379t-4baebbae87e35970fed517111f685ff0ea5e931365e8a1d3fb4c8743739878553
cites cdi_FETCH-LOGICAL-c379t-4baebbae87e35970fed517111f685ff0ea5e931365e8a1d3fb4c8743739878553
container_end_page
container_issue 2
container_start_page 21005
container_title Applied physics express
container_volume 12
creator Nakamura, Minoru
Murakami, Susumu
Udono, Haruhiko
description High concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have measured the concentrations of these products by deep-level transient spectroscopy in the samples diffused with various concentrations of nickel. From the close examination of the depth profiles of the products and the anneal-out temperature of the DDC, this species is found to be the substitutional nitrogen and the structure molecule-like split nitrogen interstitials is suggested for the N-V complex.
doi_str_mv 10.7567/1882-0786/aafde8
format article
fullrecord <record><control><sourceid>iop_cross</sourceid><recordid>TN_cdi_iop_journals_10_7567_1882_0786_aafde8</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>apexaafde8</sourcerecordid><originalsourceid>FETCH-LOGICAL-c379t-4baebbae87e35970fed517111f685ff0ea5e931365e8a1d3fb4c8743739878553</originalsourceid><addsrcrecordid>eNp1kM1OAyEURonRxFrdu2TpwrFQhoEuTeNf0sSNrgkzXCrNFAiMxj6I7yttTd3ogkBuvnMu-RC6pORG8EZMqJTTigjZTLS2BuQRGh1Gx4e3kKfoLOcVIU3NaDNCX8_JLZ3POFg8vAH2bkhhCb5K0OsBDDYAEZvgQ8Id-AES1t5gN2QcE3RgnF_iHKFzkLHzv7wJsdDZ9a4LvlgKuXa-jNrNzln18AE9HpL22RXxTlLY3IW4OUcnVvcZLn7uMXq9v3uZP1aL54en-e2i6piYDVXdamjLkQIYnwliwXAqKKW2kdxaAprDjFHWcJCaGmbbupOiZoLNpJCcszEie29XFucEVsXk1jptFCVqW6va9qa2Hap9rQW52iMuRLUK78mXDyod4VPRqSrZKSWEq2hsiV7_Ef3X_A3ihIw7</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy</title><source>Institute of Physics IOPscience extra</source><source>Institute of Physics</source><creator>Nakamura, Minoru ; Murakami, Susumu ; Udono, Haruhiko</creator><creatorcontrib>Nakamura, Minoru ; Murakami, Susumu ; Udono, Haruhiko</creatorcontrib><description>High concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have measured the concentrations of these products by deep-level transient spectroscopy in the samples diffused with various concentrations of nickel. From the close examination of the depth profiles of the products and the anneal-out temperature of the DDC, this species is found to be the substitutional nitrogen and the structure molecule-like split nitrogen interstitials is suggested for the N-V complex.</description><identifier>ISSN: 1882-0778</identifier><identifier>EISSN: 1882-0786</identifier><identifier>DOI: 10.7567/1882-0786/aafde8</identifier><identifier>CODEN: APEPC4</identifier><language>eng</language><publisher>IOP Publishing</publisher><subject>deep-level transient spectroscopy ; nitrogen-doped silicon ; nitrogen-related deep donor center ; nitrogen-vacancy complex ; substitutional nitrogen</subject><ispartof>Applied physics express, 2019-02, Vol.12 (2), p.21005</ispartof><rights>2019 The Japan Society of Applied Physics</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c379t-4baebbae87e35970fed517111f685ff0ea5e931365e8a1d3fb4c8743739878553</citedby><cites>FETCH-LOGICAL-c379t-4baebbae87e35970fed517111f685ff0ea5e931365e8a1d3fb4c8743739878553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://iopscience.iop.org/article/10.7567/1882-0786/aafde8/pdf$$EPDF$$P50$$Giop$$H</linktopdf><link.rule.ids>314,780,784,27924,27925,38868,53840</link.rule.ids></links><search><creatorcontrib>Nakamura, Minoru</creatorcontrib><creatorcontrib>Murakami, Susumu</creatorcontrib><creatorcontrib>Udono, Haruhiko</creatorcontrib><title>Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy</title><title>Applied physics express</title><addtitle>Appl. Phys. Express</addtitle><description>High concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have measured the concentrations of these products by deep-level transient spectroscopy in the samples diffused with various concentrations of nickel. From the close examination of the depth profiles of the products and the anneal-out temperature of the DDC, this species is found to be the substitutional nitrogen and the structure molecule-like split nitrogen interstitials is suggested for the N-V complex.</description><subject>deep-level transient spectroscopy</subject><subject>nitrogen-doped silicon</subject><subject>nitrogen-related deep donor center</subject><subject>nitrogen-vacancy complex</subject><subject>substitutional nitrogen</subject><issn>1882-0778</issn><issn>1882-0786</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2019</creationdate><recordtype>article</recordtype><recordid>eNp1kM1OAyEURonRxFrdu2TpwrFQhoEuTeNf0sSNrgkzXCrNFAiMxj6I7yttTd3ogkBuvnMu-RC6pORG8EZMqJTTigjZTLS2BuQRGh1Gx4e3kKfoLOcVIU3NaDNCX8_JLZ3POFg8vAH2bkhhCb5K0OsBDDYAEZvgQ8Id-AES1t5gN2QcE3RgnF_iHKFzkLHzv7wJsdDZ9a4LvlgKuXa-jNrNzln18AE9HpL22RXxTlLY3IW4OUcnVvcZLn7uMXq9v3uZP1aL54en-e2i6piYDVXdamjLkQIYnwliwXAqKKW2kdxaAprDjFHWcJCaGmbbupOiZoLNpJCcszEie29XFucEVsXk1jptFCVqW6va9qa2Hap9rQW52iMuRLUK78mXDyod4VPRqSrZKSWEq2hsiV7_Ef3X_A3ihIw7</recordid><startdate>20190201</startdate><enddate>20190201</enddate><creator>Nakamura, Minoru</creator><creator>Murakami, Susumu</creator><creator>Udono, Haruhiko</creator><general>IOP Publishing</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20190201</creationdate><title>Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy</title><author>Nakamura, Minoru ; Murakami, Susumu ; Udono, Haruhiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c379t-4baebbae87e35970fed517111f685ff0ea5e931365e8a1d3fb4c8743739878553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2019</creationdate><topic>deep-level transient spectroscopy</topic><topic>nitrogen-doped silicon</topic><topic>nitrogen-related deep donor center</topic><topic>nitrogen-vacancy complex</topic><topic>substitutional nitrogen</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Nakamura, Minoru</creatorcontrib><creatorcontrib>Murakami, Susumu</creatorcontrib><creatorcontrib>Udono, Haruhiko</creatorcontrib><collection>CrossRef</collection><jtitle>Applied physics express</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Nakamura, Minoru</au><au>Murakami, Susumu</au><au>Udono, Haruhiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy</atitle><jtitle>Applied physics express</jtitle><addtitle>Appl. Phys. Express</addtitle><date>2019-02-01</date><risdate>2019</risdate><volume>12</volume><issue>2</issue><spage>21005</spage><pages>21005-</pages><issn>1882-0778</issn><eissn>1882-0786</eissn><coden>APEPC4</coden><abstract>High concentrations of a deep donor center (DDC) and substitutional nickel (Nis) are distinctively produced in the nitrogen-doped/nickel-diffused silicon crystals. To find out the structural origins of the DDC and the preexisting nitrogen-vacancy (N-V) complex that produces the DDC and Nis, we have measured the concentrations of these products by deep-level transient spectroscopy in the samples diffused with various concentrations of nickel. From the close examination of the depth profiles of the products and the anneal-out temperature of the DDC, this species is found to be the substitutional nitrogen and the structure molecule-like split nitrogen interstitials is suggested for the N-V complex.</abstract><pub>IOP Publishing</pub><doi>10.7567/1882-0786/aafde8</doi><tpages>5</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1882-0778
ispartof Applied physics express, 2019-02, Vol.12 (2), p.21005
issn 1882-0778
1882-0786
language eng
recordid cdi_iop_journals_10_7567_1882_0786_aafde8
source Institute of Physics IOPscience extra; Institute of Physics
subjects deep-level transient spectroscopy
nitrogen-doped silicon
nitrogen-related deep donor center
nitrogen-vacancy complex
substitutional nitrogen
title Origins of the nitrogen-related deep donor center and its preceding species in nitrogen-doped silicon determined by deep-level transient spectroscopy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T14%3A33%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-iop_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Origins%20of%20the%20nitrogen-related%20deep%20donor%20center%20and%20its%20preceding%20species%20in%20nitrogen-doped%20silicon%20determined%20by%20deep-level%20transient%20spectroscopy&rft.jtitle=Applied%20physics%20express&rft.au=Nakamura,%20Minoru&rft.date=2019-02-01&rft.volume=12&rft.issue=2&rft.spage=21005&rft.pages=21005-&rft.issn=1882-0778&rft.eissn=1882-0786&rft.coden=APEPC4&rft_id=info:doi/10.7567/1882-0786/aafde8&rft_dat=%3Ciop_cross%3Eapexaafde8%3C/iop_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c379t-4baebbae87e35970fed517111f685ff0ea5e931365e8a1d3fb4c8743739878553%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true