Expansion and contraction of single Shockley stacking faults in SiC epitaxial layer under ultraviolet irradiation

Behaviors such as expansion and contraction of single Shockley stacking faults (1SSFs) in a 4H-SiC epitaxial layer under various ultraviolet (UV) irradiation conditions were systematically investigated. We demonstrate that the area of the 1SSF has a key role in its behavior during UV light exposure....

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Bibliographic Details
Published in:Applied physics express 2019-04, Vol.12 (4), p.41006
Main Authors: Tanaka, Takanori, Shiomi, Hiromu, Kawabata, Naoyuki, Yonezawa, Yoshiyuki, Kato, Tomohisa, Okumura, Hajime
Format: Article
Language:English
Subjects:
silicon carbide
stacking faults
UV irradiation
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Summary:Behaviors such as expansion and contraction of single Shockley stacking faults (1SSFs) in a 4H-SiC epitaxial layer under various ultraviolet (UV) irradiation conditions were systematically investigated. We demonstrate that the area of the 1SSF has a key role in its behavior during UV light exposure. Contraction immediately progresses after a relatively weak UV irradiation at a high-temperature. The contraction velocity gradually decreases and eventually becomes zero at a certain area, which is dependent on the UV irradiation.
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab0a8f