Design of ultra-high storage density probe memory with patterned Ge2Sb2Te5 layer and continuous capping layer

A novel design of patterned phase-change electrical probe memory with a continuous capping layer is proposed. To achieve ultra-high density, whilst having immunity to thermal and readout cross-talk interference, the devised memory is optimized to have a continuous 40 nm TiN underlayer, continuous 2...

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Bibliographic Details
Published in:Applied physics express 2019-05, Vol.12 (5)
Main Authors: Wang, Lei, Liu, Zhi-Gao, Yang, Ci-Hui, Wen, Jing, Xiong, Bang-Shu
Format: Article
Language:English
Online Access:Get full text
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Summary:A novel design of patterned phase-change electrical probe memory with a continuous capping layer is proposed. To achieve ultra-high density, whilst having immunity to thermal and readout cross-talk interference, the devised memory is optimized to have a continuous 40 nm TiN underlayer, continuous 2 nm DLC capping layer and 5 nm Ge2Sb2Te5 layer patterned into numerous cells, separated by a 5 nm thick insulator region. The feasibility of using the designed device to achieve ultra-high density, superb anti-interference and a simplified fabrication process, has been demonstrated according to a developed full 3D electro-thermal and phase-change model.
ISSN:1882-0778
1882-0786
DOI:10.7567/1882-0786/ab0ef7